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5962-9679505MYA PDF预览

5962-9679505MYA

更新时间: 2024-01-01 17:04:47
品牌 Logo 应用领域
WEDC 静态存储器内存集成电路
页数 文件大小 规格书
25页 172K
描述
Standard SRAM, 256KX16, 25ns, CMOS, CDSO44, CERAMIC, SOJ-44

5962-9679505MYA 技术参数

生命周期:Obsolete零件包装代码:SOJ
包装说明:SOJ,针数:44
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:25 nsJESD-30 代码:R-CDSO-J44
JESD-609代码:e0长度:28.575 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:44字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:256KX16封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:SOJ封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
认证状态:Not Qualified筛选级别:MIL-STD-883
座面最大高度:4.44 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:TIN LEAD
端子形式:J BEND端子节距:1.27 mm
端子位置:DUALBase Number Matches:1

5962-9679505MYA 数据手册

 浏览型号5962-9679505MYA的Datasheet PDF文件第2页浏览型号5962-9679505MYA的Datasheet PDF文件第3页浏览型号5962-9679505MYA的Datasheet PDF文件第4页浏览型号5962-9679505MYA的Datasheet PDF文件第5页浏览型号5962-9679505MYA的Datasheet PDF文件第6页浏览型号5962-9679505MYA的Datasheet PDF文件第7页 
REVISIONS  
LTR  
DESCRIPTION  
DATE (YR-MO-DA)  
APPROVED  
A
B
Changes in accordance with NOR 5962-R159-97.  
96-12-20  
98-02-18  
Raymond Monnin  
Raymond Monnin  
Change to Table I; ICCDR, device type column. Updated boilerplate.  
ksr  
C
D
Correct E2 dimension on package X from 3.85 min and 3.95 max to  
.385 min and .395 max inches. Change the IOL test condition for VOL  
from 8 mA to 6 mA in Table I. Updated boilerplate. ksr  
04-10-27  
09-01-21  
Raymond Monnin  
Robert Heber  
Add device type 07, updated Table I for 07 device, corrected Figure  
3, and added package Z. ksr  
REV  
SHEET  
REV  
D
D
D
D
D
D
D
21  
D
D
22  
D
D
23  
D
D
24  
D
SHEET  
15  
16  
17  
18  
19  
20  
REV STATUS  
OF SHEETS  
REV  
D
5
D
6
D
7
D
8
D
9
D
D
D
D
D
SHEET  
1
2
3
4
10  
11  
12  
13  
14  
PMIC N/A  
PREPARED BY  
Gary L. Gross  
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43218-3990  
http://www.dscc.dla.mil  
CHECKED BY  
STANDARD  
Jeff Bowling  
MICROCIRCUIT  
APPROVED BY  
Michael A. Frye  
DRAWING  
THIS DRAWING IS  
AVAILABLE  
MICROCIRCUIT, MEMORY,  
DIGITAL, 256K X 16 STATIC  
RANDOM ACCESS MEMORY  
(SRAM), MONOLITHIC SILICON  
FOR USE BY ALL  
DEPARTMENTS  
AND AGENCIES OF THE  
DEPARTMENT OF DEFENSE  
AMSC N/A  
DRAWING APPROVAL DATE  
96-05-17  
REVISION LEVEL  
SIZE  
A
CAGE CODE  
5962-96795  
67268  
D
SHEET  
1 OF 24  
DSCC FORM 2233  
APR 97  
5962-E129-09  

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