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5962-9679604HYX PDF预览

5962-9679604HYX

更新时间: 2024-11-28 05:39:43
品牌 Logo 应用领域
玛居礼 - MERCURY 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
12页 817K
描述
EEPROM, 128KX8, 150ns, Parallel, CMOS, CDIP32, 0.600 INCH, HERMETIC SEALED, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32

5962-9679604HYX 数据手册

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WME128K8-XXX  
128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796  
FEATURES  
 Read Access Times of 125, 140, 150, 200, 250, 300ns  
 Page Write Cycle Time 10ms Max.  
 JEDEC Approved Packages  
 Data Polling for End of Write Detection  
 Hardware and Software Data Protection  
 TTL Compatible Inputs and Outputs  
• 32 pin, Hermetic Ceramic, 0.600" DIP  
(Package 300)  
• 32 lead, Hermetic Ceramic, 0.400" SOJ  
(Package 101)  
This product is subject to change without notice.  
 Commercial, Industrial and Military Temperature Ranges  
 MIL-STD-883 Compliant Devices Available  
 Write Endurance 10,000 Cycles  
 Data Retention at 25°C, 10 Years  
 Low Power CMOS Operation  
 Automatic Page Write Operation  
• Internal Address and Data Latches for 128 Bytes  
• Internal Control Timer  
FIGURE 1 – PIN CONFIGURATION  
PIN DESCRIPTION  
A0-16  
I/O0-7  
CS#  
OE#  
WE#  
VCC  
Address Inputs  
Data Input/Output  
Chip Selects  
Output Enable  
Write Enable  
+5.0v Power  
Ground  
32 DIP  
32 CSOJ  
TOP VIEW  
NC  
A16  
A15  
A12  
A7  
1
2
3
4
5
6
32  
VCC  
VSS  
31 WE#  
30 NC  
29 A14  
28 A13  
27 A8  
A6  
A5  
7
26 A9  
A4  
A3  
A2  
A1  
8
9
25 A11  
24 OE#  
23 A10  
22 CS#  
21 I/O7  
20 I/O6  
19 I/O5  
18 I/O4  
17 I/O3  
10  
11  
12  
13  
14  
15  
16  
A0  
I/O0  
I/O1  
I/O2  
VSS  
Microsemi Corporation reserves the right to change products or specications without notice.  
May 2014 © 2014 Microsemi Corporation. All rights reserved.  
Rev. 8  
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp  

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