Datasheet > 5962-9679506MYA

5962-9679506MYA

更新时间： 2024-11-27 20:29:39

品牌	Logo	应用领域
WEDC		静态存储器内存集成电路
页数	文件大小	规格书
25页	172K
描述
Standard SRAM, 256KX16, 20ns, CMOS, CDSO44, CERAMIC, SOJ-44

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5962-9679506MYA 数据手册

REVISIONS

LTR

DESCRIPTION

DATE (YR-MO-DA)

APPROVED

Changes in accordance with NOR 5962-R159-97.

96-12-20

98-02-18

Raymond Monnin

Change to Table I; I_CCDR, device type column. Updated boilerplate.

ksr

Correct E2 dimension on package X from 3.85 min and 3.95 max to

.385 min and .395 max inches. Change the I_OLtest condition for V_OL

from 8 mA to 6 mA in Table I. Updated boilerplate. ksr

04-10-27

09-01-21

Raymond Monnin

Robert Heber

Add device type 07, updated Table I for 07 device, corrected Figure

3, and added package Z. ksr

REV

SHEET

REV

SHEET

REV STATUS

OF SHEETS

REV

SHEET

PMIC N/A

PREPARED BY

Gary L. Gross

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

http://www.dscc.dla.mil

CHECKED BY

STANDARD

Jeff Bowling

MICROCIRCUIT

APPROVED BY

Michael A. Frye

DRAWING

THIS DRAWING IS

AVAILABLE

MICROCIRCUIT, MEMORY,

DIGITAL, 256K X 16 STATIC

RANDOM ACCESS MEMORY

(SRAM), MONOLITHIC SILICON

FOR USE BY ALL

DEPARTMENTS

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

AMSC N/A

DRAWING APPROVAL DATE

96-05-17

REVISION LEVEL

SIZE

CAGE CODE

5962-96795

67268

SHEET

1 OF 24

DSCC FORM 2233

APR 97

5962-E129-09

12 3 4 5 6 7...25

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与5962-9679506MYA相关器件

型号	品牌	获取价格	描述	数据表
5962-9679506MYX	WEDC	获取价格	Standard SRAM, 256KX16, 20ns, CMOS, CDSO44, CERAMIC, SOJ-44
5962-9679601HXA	ETC	获取价格	x8 EEPROM
5962-9679601HXC	ETC	获取价格	x8 EEPROM
5962-9679601HYA	ETC	获取价格	x8 EEPROM
5962-9679601HYC	ETC	获取价格	x8 EEPROM
5962-9679601HYX	MERCURY	获取价格	EEPROM, 128KX8, 300ns, Parallel, CMOS, CDIP32, 0.600 INCH, HERMETIC SEALED, SINGLE CAVITY,
5962-9679602HXA	ETC	获取价格	x8 EEPROM
5962-9679602HXC	ETC	获取价格	x8 EEPROM
5962-9679602HXX	MERCURY	获取价格	EEPROM, 128KX8, 250ns, Parallel, CMOS, CDSO32, 0.400 INCH, HERMETIC SEALED, CERAMIC, SOJ-3
5962-9679602HYA	ETC	获取价格	x8 EEPROM