Datasheet > 5962-9679605HYX

5962-9679605HYX

更新时间： 2024-11-28 03:43:23

品牌	Logo	应用领域
玛居礼 - MERCURY		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
12页	817K
描述
EEPROM, 128KX8, 140ns, Parallel, CMOS, CDIP32, 0.600 INCH, HERMETIC SEALED, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32

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5962-9679605HYX 数据手册

WME128K8-XXX

128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796

FEATURES

 Read Access Times of 125, 140, 150, 200, 250, 300ns

 Page Write Cycle Time 10ms Max.

 JEDEC Approved Packages

 Data Polling for End of Write Detection

 Hardware and Software Data Protection

 TTL Compatible Inputs and Outputs

• 32 pin, Hermetic Ceramic, 0.600" DIP

(Package 300)

• 32 lead, Hermetic Ceramic, 0.400" SOJ

(Package 101)

This product is subject to change without notice.

 Commercial, Industrial and Military Temperature Ranges

 MIL-STD-883 Compliant Devices Available

 Write Endurance 10,000 Cycles

 Data Retention at 25°C, 10 Years

 Low Power CMOS Operation

 Automatic Page Write Operation

• Internal Address and Data Latches for 128 Bytes

• Internal Control Timer

FIGURE 1 – PIN CONFIGURATION

PIN DESCRIPTION

A0-16

I/O0-7

CS#

OE#

WE#

V_CC

Address Inputs

Data Input/Output

Chip Selects

Output Enable

Write Enable

+5.0v Power

Ground

32 DIP

32 CSOJ

TOP VIEW

A16

A15

A12

VCC

V_SS

31 WE#

30 NC

29 A14

28 A13

27 A8

26 A9

25 A11

24 OE#

23 A10

22 CS#

21 I/O7

20 I/O6

19 I/O5

18 I/O4

17 I/O3

I/O0

I/O1

I/O2

V^SS

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 8

Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp

12 3 4 5 6 7...12

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5962-9679606HXA	WEDC	获取价格	EEPROM, 128KX8, 120ns, Parallel, CMOS, CDSO32, CERAMIC, DSO 32
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5962-9679606HYA	WEDC	获取价格	EEPROM, 128KX8, 120ns, Parallel, CMOS, CDIP32, CERAMIC, DIP-32
5962-9679606HYC	WEDC	获取价格	EEPROM, 128KX8, 120ns, Parallel, CMOS, CDIP32, CERAMIC, DIP-32
5962-9679606HYX	WEDC	获取价格	EEPROM, 128KX8, 120ns, Parallel, CMOS, CDIP32, 0.600 INCH, HERMETIC SEALED, SINGLE CAVITY,
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