Datasheet > 5962-9458501HNX

5962-9458501HNX

更新时间： 2024-10-29 07:44:51

品牌	Logo	应用领域
美高森美 - MICROSEMI		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
15页	300K
描述
EEPROM Module, 128KX32, 300ns, Parallel, CMOS, CQMA68, CERAMIC, QFP-68

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5962-9458501HNX 数据手册

WE128K32-XXX

READ

The WE128K32-XXX stores data at the memory location

determined by the address pins. When CS and OE are low and

WE is high, this data is present on the outputs. When CS and

OE are high, the outputs are in a high impedance state. This

two line control prevents bus contention.

AC READ CHARACTERISTICS

(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)

Read Cycle Parameter

Symbol

-120

-140

-150

-200

-250

Min Max

-300

Min Max

Unit

Min

Max

Min

Max

Min

Max

Min

Max

Read Cycle Time

tRC

tACC

tACS

tOH

tOE

120

140

150

200

250

300

Address Access Time

120

140

150

200

Chip Select Access Time

Output Hold from Add. Change, OE or CS

Output Enable to Output Valid

Chip Select or OE to High Z Output

t^DF

FIG. 7

READ WAVEFORMS

ADDRESS VALID

ADDRESS

CS1-4

ACS

ACC

NOTES:

HIGH Z

OUTPUT

VALID

OE may be delayed up to t^ACS- tOE after the

falling edge of CS without impact on t^OEor by

t^ACC- tOE after an address change without

impact on t^ACC.

OUTPUT

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

1...3 4 567 8 9...15

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5962-9458501HYC	ETC	获取价格	x32 EEPROM Module
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