Datasheet > 5962-9458502HMX

5962-9458502HMX

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
美高森美 - MICROSEMI		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
16页	1420K
描述
EEPROM Module,

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数据手册

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5962-9458502HMX 数据手册

WE128K32-XXX

128Kx32 EEPROM MODULE, SMD 5962-94585

FEATURES

 Access Times of 125, 140, 150, 200, 250, 300ns

 Data Polling for End of Write Detection

 Packaging:

 Hardware and Software Data Protection

 TTL Compatible Inputs and Outputs

 5 Volt Power Supply

• 66-pin, PGA Type, 27.3mm (1.075") square, Hermetic

Ceramic HIP (Package 400)

• 68 lead, 22.4mm sq. CQFP (G2T), 4.57mm (0.180") high,

(Package 509)

 Built-in Decoupling Caps and Multiple Ground Pins for Low

Noise Operation

 Organized as 128Kx32; User Conﬁgurable as 256Kx16 or

512Kx8

 Weight

 Write Endurance 10,000 Cycles

WE128K32-XG2TX – 8 grams typical

WE128K32-XH1X – 13 grams typical

 Data Retention Ten Years Minimum (at +25°C)

 Commercial, Industrial and Military Temperature Ranges

 Low Power CMOS

*This product is subject to change without notice.

 Automatic Page Write Operation

 Page Write Cycle Time: 10ms Max

FIGURE 1 – PIN CONFIGURATION FOR WE128K32N-XH1X

TOP VIEW

PIN DESCRIPTION

I/O0-31

A0-16

WE1-4#

CS1-4#

OE#

Data Input/Output

Address Inputs

Write Enable

Chip Selects

Output Enable

Power Supply

Ground

I/O8

I/O9

I/O10

A13

WE2#

CS²#

GND

I/O11

A10

I/O15

I/O24

I/O25

I/O26

VCC

CS4#

WE⁴#

I/O²⁷

I/O31

I/O30

I/O29

I/O28

I/O14

I/O13

I/O12

OE#

V_CC

GND

Not Connected

A14

A15

A11

BLOCK DIAGRAM

A16

A12

WE1#

I/O⁷

WE₁# CS₁#

128K x 8

WE₂# CS₂#

WE₃# CS₃#

WE₄# CS₄#

128K x 8

VCC

WE3#

CS³#

GND

I/O19

I/O23

I/O22

I/O21

I/O20

OE#

A0-16

I/O0

I/O1

I/O2

CS1#

I/O6

I/O16

I/O17

I/O18

128K x 8

I/O5

I/O3

I/O4

I/O16-23

I/O24-31

I/O8-15

I/O0-7

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 16

Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp

12 3 4 5 6 7...16

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