Datasheet > 5962-9458501HNX

5962-9458501HNX

更新时间： 2023-01-15 00:00:00

品牌	Logo	应用领域
美高森美 - MICROSEMI		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
15页	300K
描述
EEPROM Module, 128KX32, 300ns, Parallel, CMOS, CQMA68, CERAMIC, QFP-68

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5962-9458501HNX 数据手册

WE128K32-XXX

ABSOLUTE MAXIMUM RATINGS

TRUTH TABLE

Parameter

Symbol

Unit

°C

Mode

Standby

Read

Write

Out Disable

Write

Data I/O

High Z

Data Out

Operating Temperature

Storage Temperature

Signal Voltage Relative to GND

Voltage on OE and A9

NOTE:

TSTG

-55 to +125

-65 to +150

-0.6 to +6.25

-0.6 to +13.5

Data In

High Z/Data Out

Inhibit

Stresses above those listed under "Absolute Maximum Ratings" may cause

permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated

in the operational sections of this specification is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect

device reliability.

CAPACITANCE

(TA = +25°C)

Parameter

Symbol

COE

Conditions

Max Unit

RECOMMENDED OPERATING CONDITIONS

OE capacitance

IN = 0 V, f = 1.0 MHz

Parameter

Symbol

VCC

VIH

Min

4.5

Max

5.5

Unit

WE^1-4capacitance

HIP (PGA)

CWE

Supply Voltage

CQFP G4

CQFP G2T/G1U

Input High Voltage

Input Low Voltage

Operating Temp. (Mil.)

Operating Temp. (Ind.)

2.0

VCC + 0.3

+0.8

VIL

-0.5

-55

-40

CS1-4 capacitance

CCS

CI/O

C^AD

IN = 0 V, f = 1.0 MHz

I/O = 0 V, f = 1.0 MHz

IN = 0 V, f = 1.0 MHz

+125

+85

°C

Data I/O capacitance

Address input capacitance

T^A

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS

(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)

Parameter

Symbol

Conditions

VCC = 5.5, VIN = GND to VCC

CS = VIH, OE = VIH, VOUT = GND to VCC

CS = VIL, OE = VIH, f = 5MHz

CS = VIH, OE = VIH, f = 5MHz

IOL = 2.1mA, VCC = 4.5V

Min

Max

Unit

µA

Input Leakage Current

Output Leakage Current

ILI

ILOx32

ICCx32

ISB

Operating Supply Current x 32 Mode

Standby Current

250

2.5

0.45

Output Low Voltage

VOL

Output High Voltage

V^OH

IOH = -400µA, VCC = 4.5V

2.4

NOTE: DC test conditions: V^IH= VCC -0.3V, VIL = 0.3V

FIG. 4

AC TEST CONDITIONS

AC TEST CIRCUIT

I_OL

Parameter

Typ

Unit

Current Source

Input Pulse Levels

VIL = 0, VIH = 3.0

Input Rise and Fall

Input and Output Reference Level

Output Timing Reference Level

1.5

V_Z

≈ 1.5V

D.U.T.

(Bipolar Supply)

C_eff= 50 pf

NOTES:

V^Zis programmable from -2V to +7V.

I^OL& IOH programmable from 0 to 16mA.

Tester Impedance Z⁰= 75 Ω.

V^Zis typically the midpoint of VOH and VOL.

I^OL& IOH are adjusted to simulate a typical resistive load circuit.

ATE tester includes jig capacitance.

I_OH

Current Source

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

1 234 5 6 7...15

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与5962-9458501HNX相关器件

型号	品牌	获取价格	描述	数据表
5962-9458501HTA	ETC	获取价格	x32 EEPROM Module
5962-9458501HTC	ETC	获取价格	x32 EEPROM Module
5962-9458501HUA	ETC	获取价格	x32 EEPROM Module
5962-9458501HUC	ETC	获取价格	x32 EEPROM Module
5962-9458501HXA	ETC	获取价格	x32 EEPROM Module
5962-9458501HXC	ETC	获取价格	x32 EEPROM Module
5962-9458501HYA	ETC	获取价格	x32 EEPROM Module
5962-9458501HYC	ETC	获取价格	x32 EEPROM Module
5962-9458501HYX	WEDC	获取价格	EEPROM Module, 128KX32, 300ns, Parallel, CMOS, HIP-66
5962-9458502H4A	MICROSS	获取价格	EEPROM, 128KX32, 250ns, Parallel, CMOS, CPGA66, PGA-66

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