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4N60L-TND-R PDF预览

4N60L-TND-R

更新时间: 2024-11-30 01:03:39
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
7页 262K
描述
N-CHANNEL JUNCTIN SILICON FET

4N60L-TND-R 数据手册

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UNISONIC TECHNOLOGIES CO., LTD  
4N60-E  
Power MOSFET  
4A, 600V N-CHANNEL  
POWER MOSFET  
DESCRIPTION  
The UTC 4N60-E is a high voltage power MOSFET  
and is designed to have better characteristics, such as  
fast switching time, low gate charge, low on-state  
resistance and have  
a
high rugged avalanche  
characteristics. This power MOSFET is usually used at  
high speed switching applications in power supplies,  
PWM motor controls, high efficient DC to DC converters  
and bridge circuits.  
FEATURES  
* RDS(ON) < 2.5@ VGS = 10 V, ID = 2.2A  
* Fast Switching Capability  
* Avalanche Energy Specified  
* Improved dv/dt Capability, high RuggednessA  
SYMBOL  
www.unisonic.com.tw  
1 of 7  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R502-970.C  

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