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3PMT45C PDF预览

3PMT45C

更新时间： 2024-09-13 19:36:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
3页 79K
描述
Trans Voltage Suppressor Diode, 1500W, 45V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-3

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3PMT45C 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：R-PSSO-G2针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.87
最小击穿电压：50 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
湿度敏感等级：1最大非重复峰值反向功率耗散：1500 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：BIDIRECTIONAL认证状态：Not Qualified
最大重复峰值反向电压：45 V表面贴装：YES
技术：AVALANCHE端子面层：TIN LEAD
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

3PMT45C 数据手册

 浏览型号3PMT45C的Datasheet PDF文件第2页浏览型号3PMT45C的Datasheet PDF文件第3页 
3PMT5.0 thru 3PMT170  
POWERMITE®  
1500 Watt Transient Absorption Zener  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
POWERMITE ®  
These 1500 watt transient voltage suppressors offer power-handling capabilities only  
found in larger packages. They are most often used for protecting against transients  
from inductive switching environments or induced secondary lightning effects as  
found in lower surge levels of IEC61000-4-5. With very fast response times, they are  
also effective in protection from ESD or EFT. Powermite® package features include a  
full metallic bottom that eliminates the possibility of solder-flux entrapm ent during  
assembly. They also provide unique locking tab acting as an integral heat sink. With  
its very short terminations, parasitic inductance is minimized to reduce voltage  
overshoots during fast-rise-time transients.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEF ITS  
·
·
·
·
·
·
Very low profile surface mount package (1.1mm)  
Integral heat sink-locking tabs  
Compatible with automatic insertion equipment  
Full metallic bottom eliminates flux entrapment  
Voltage range 5 volts to 170 volts  
· Secondary lightning transient protection  
· Inductive switching transient protection  
· Small footprint  
· Very low parasitic inductance for minimal  
voltage overshoot  
· Compliant to IEC61000-4-2 and IEC61000-4-4 for  
ESD and EFT protection respectively and  
Available in both unidirectional or bi-directional  
(C suffix for bi-directional)  
IEC61000-4-5 for surge levels defined herein  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
1500 Watt peak pulse power (10 / 1000 µsec.)  
Forward Surge Current: 200 Amps (8.3 ms)  
(excluding bidirectional)  
Repetition surge rate (duty factor): 0.01%  
Lead and mounting temperature: 260°C for 10 sec  
· Terminals tin-lead plated  
·
·
·
· Two-lead side internally connected together  
· Cathode designated with band (unidirectional)  
· Molded epoxy package meets UL94V-0  
· Weight: 0.072 grams (approximate)  
· Thermal resistance: 2.5°C / watt junction to tab  
130°C / watt junction to ambient with  
recommended footprint  
·
·
· Tape & Reel packaging per EIA-481-2  
(16 mm - 6000 units/reel)  
PEAK PULSE POWER RATI N G S  
100  
10  
100  
75  
50  
1.0  
.10  
25  
0
0
50 100 150 200  
100ns  
1µs  
10µs  
100µs  
1ms  
10ms  
T – Temperature – ºC  
td – Pulse Time – sec  
Copyright ã 2001  
MSCXXXX.PDF 09-09 2002 REV 0  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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