Datasheet > 3PMT5.0E3

3PMT5.0E3

更新时间： 2024-10-30 19:36:47

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
3页	79K
描述
Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC PACKAGE-3

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

3PMT5.0E3 技术参数

生命周期：	Active	包装说明：	R-PSSO-G2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.79
最小击穿电压：	6.4 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	R-PSSO-G2	最大非重复峰值反向功率耗散：	1500 W
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性：	UNIDIRECTIONAL
最大重复峰值反向电压：	5 V	表面贴装：	YES
技术：	AVALANCHE	端子形式：	GULL WING
端子位置：	SINGLE	Base Number Matches：	1

3PMT5.0E3 数据手册

3PMT5.0 thru 3PMT170

POWERMITE^®

1500 Watt Transient Absorption Zener

S C O T T S D A L E D I V I S I O N

DESCRIPTION

POWERMITE ^®

These 1500 watt transient voltage suppressors offer power-handling capabilities only

found in larger packages. They are most often used for protecting against transients

from inductive switching environments or induced secondary lightning effects as

found in lower surge levels of IEC61000-4-5. With very fast response times, they are

also effective in protection from ESD or EFT. Powermite^®package features include a

full metallic bottom that eliminates the possibility of solder-flux entrapm ent during

assembly. They also provide unique locking tab acting as an integral heat sink. With

its very short terminations, parasitic inductance is minimized to reduce voltage

overshoots during fast-rise-time transients.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEF ITS

Very low profile surface mount package (1.1mm)

Integral heat sink-locking tabs

Compatible with automatic insertion equipment

Full metallic bottom eliminates flux entrapment

Voltage range 5 volts to 170 volts

· Secondary lightning transient protection

· Inductive switching transient protection

· Small footprint

· Very low parasitic inductance for minimal

voltage overshoot

· Compliant to IEC61000-4-2 and IEC61000-4-4 for

ESD and EFT protection respectively and

Available in both unidirectional or bi-directional

(C suffix for bi-directional)

IEC61000-4-5 for surge levels defined herein

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

1500 Watt peak pulse power (10 / 1000 µsec.)

Forward Surge Current: 200 Amps (8.3 ms)

(excluding bidirectional)

Repetition surge rate (duty factor): 0.01%

Lead and mounting temperature: 260°C for 10 sec

· Terminals tin-lead plated

· Two-lead side internally connected together

· Cathode designated with band (unidirectional)

· Molded epoxy package meets UL94V-0

· Weight: 0.072 grams (approximate)

· Thermal resistance: 2.5°C / watt junction to tab

130°C / watt junction to ambient with

recommended footprint

· Tape & Reel packaging per EIA-481-2

(16 mm - 6000 units/reel)

PEAK PULSE POWER RATI N G S

100

1.0

.10

50 100 150 200

100ns

1µs

10µs

100µs

1ms

10ms

T – Temperature – ºC

t_d– Pulse Time – sec

MSCXXXX.PDF 09-09 2002 REV 0

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

下载PDF

与3PMT5.0E3相关器件

型号	品牌	获取价格	描述	数据表
3PMT51	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 51V V(RWM), Unidirectional, 1 Element, Silicon, PLA
3PMT51A	MICROSEMI	获取价格	POWERMITE Low Profile 1500 Watt Transient Voltage Suppressor
3PMT51AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 51V V(RWM), Unidirectional, 1 Element, Silicon, ROH
3PMT51C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 51V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
3PMT51CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 51V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
3PMT51CAE3	MICROSEMI	获取价格	暂无描述
3PMT51CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 51V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
3PMT51E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 51V V(RWM), Unidirectional, 1 Element, Silicon, PLA
3PMT54	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 54V V(RWM), Unidirectional, 1 Element, Silicon, PLA
3PMT54A	MICROSEMI	获取价格	POWERMITE Low Profile 1500 Watt Transient Voltage Suppressor

与3PMT5.0E3相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

19
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

20
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

45
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

52

产品中心

服务支持

精选活动

关于我们

帮助中心

3PMT5.0E3

3PMT5.0E3 技术参数

3PMT5.0E3 数据手册

与3PMT5.0E3相关器件

与3PMT5.0E3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

3PMT5.0E3

3PMT5.0E3 技术参数

3PMT5.0E3 数据手册

与3PMT5.0E3相关器件

与3PMT5.0E3相关文章

您还可以找

您在本页遇到什么问题？