Datasheet > 3PMT51CE3

3PMT51CE3

更新时间： 2024-11-02 06:55:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	79K
描述
Trans Voltage Suppressor Diode, 1500W, 51V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-3

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3PMT51CE3 数据手册

3PMT5.0 thru 3PMT170

POWERMITE^®

1500 Watt Transient Absorption Zener

S C O T T S D A L E D I V I S I O N

DESCRIPTION

POWERMITE ^®

These 1500 watt transient voltage suppressors offer power-handling capabilities only

found in larger packages. They are most often used for protecting against transients

from inductive switching environments or induced secondary lightning effects as

found in lower surge levels of IEC61000-4-5. With very fast response times, they are

also effective in protection from ESD or EFT. Powermite^®package features include a

full metallic bottom that eliminates the possibility of solder-flux entrapm ent during

assembly. They also provide unique locking tab acting as an integral heat sink. With

its very short terminations, parasitic inductance is minimized to reduce voltage

overshoots during fast-rise-time transients.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEF ITS

Very low profile surface mount package (1.1mm)

Integral heat sink-locking tabs

Compatible with automatic insertion equipment

Full metallic bottom eliminates flux entrapment

Voltage range 5 volts to 170 volts

· Secondary lightning transient protection

· Inductive switching transient protection

· Small footprint

· Very low parasitic inductance for minimal

voltage overshoot

· Compliant to IEC61000-4-2 and IEC61000-4-4 for

ESD and EFT protection respectively and

Available in both unidirectional or bi-directional

(C suffix for bi-directional)

IEC61000-4-5 for surge levels defined herein

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

1500 Watt peak pulse power (10 / 1000 µsec.)

Forward Surge Current: 200 Amps (8.3 ms)

(excluding bidirectional)

Repetition surge rate (duty factor): 0.01%

Lead and mounting temperature: 260°C for 10 sec

· Terminals tin-lead plated

· Two-lead side internally connected together

· Cathode designated with band (unidirectional)

· Molded epoxy package meets UL94V-0

· Weight: 0.072 grams (approximate)

· Thermal resistance: 2.5°C / watt junction to tab

130°C / watt junction to ambient with

recommended footprint

· Tape & Reel packaging per EIA-481-2

(16 mm - 6000 units/reel)

PEAK PULSE POWER RATI N G S

100

1.0

.10

50 100 150 200

100ns

1µs

10µs

100µs

1ms

10ms

T – Temperature – ºC

t_d– Pulse Time – sec

MSCXXXX.PDF 09-09 2002 REV 0

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与3PMT51CE3相关器件

型号	品牌	获取价格	描述	数据表
3PMT51E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 51V V(RWM), Unidirectional, 1 Element, Silicon, PLA
3PMT54	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 54V V(RWM), Unidirectional, 1 Element, Silicon, PLA
3PMT54A	MICROSEMI	获取价格	POWERMITE Low Profile 1500 Watt Transient Voltage Suppressor
3PMT54AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 54V V(RWM), Unidirectional, 1 Element, Silicon, ROH
3PMT54C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 54V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
3PMT54CA	MICROSEMI	获取价格	暂无描述
3PMT54CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 54V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
3PMT54CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 54V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
3PMT54E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 54V V(RWM), Unidirectional, 1 Element, Silicon, PLA
3PMT58	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 58V V(RWM), Unidirectional, 1 Element, Silicon, PLA

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