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3N251-E4 PDF预览

3N251-E4

更新时间: 2024-11-25 14:46:31
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
3页 174K
描述
DIODE 1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE KBPM, 4 PIN, Bridge Rectifier Diode

3N251-E4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PSIP-W4
针数:4Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.14
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PSIP-W4JESD-609代码:e4
湿度敏感等级:1最大非重复峰值正向电流:50 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:800 V
子类别:Bridge Rectifier Diodes表面贴装:NO
端子面层:Silver (Ag)端子形式:WIRE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

3N251-E4 数据手册

 浏览型号3N251-E4的Datasheet PDF文件第2页浏览型号3N251-E4的Datasheet PDF文件第3页 
KBP005M thru KBP10M, 3N246 thru 3N252  
Vishay Semiconductors  
Glass Passivated Single-Phase Bridge Rectifier  
Case Style KBPM  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
1.5 A  
50 V to 1000 V  
50 A  
5 µA  
VF  
1.0 V  
Tj max.  
150 °C  
~
~
~
~
Features  
Mechanical Data  
• UL Recognition file number E54214  
• Ideal for printed circuit board  
• High surge current capability  
• High case dielectric strength  
• Solder Dip 260 °C, 40 seconds  
Case: KBPM  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Silver plated (E4 Suffix) leads, solderable  
per J-STD-002B and JESD22-B102D  
Polarity: As marked on body  
Typical Applications  
General purpose use in ac-to-dc bridge full wave rec-  
tification for Switching Power Supply, Home Appli-  
ances, Office Equipment, and Telecommunication  
applications  
Maximum Ratings  
Ratings at 25 °C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
KBP  
005M  
KBP  
01M  
KBP  
02M  
KBP  
04M  
KBP  
06M  
KBP  
08M  
KBP  
10M  
Unit  
3N246 3N247 3N248 3N249 3N250 3N251 3N252  
* Maximum repetitive peak reverse voltage  
* Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
1.5  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
* Maximum DC blocking voltage  
100  
1000  
Max. average forward output rectified current  
at TA = 40 °C  
IF(AV)  
* Peak forward surge current single half sine-  
wave superimposed on rated load  
IFSM  
I2t  
50  
30  
A
A2sec  
°C  
Rating for fusing (t < 8.3 ms)  
10  
* Operating junction and storage temperature TJ,TSTG  
range  
- 55 to + 150  
Document Number 88531  
08-Jul-05  
www.vishay.com  
1

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