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3N253-E4/72 PDF预览

3N253-E4/72

更新时间： 2024-11-25 14:46:31
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 91K
描述
RECTFR BRIDGE SGL 50V 2A 4PIN CASE KBPM - Bulk

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中文翻译

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3N253-E4/72 技术参数

是否无铅：不含铅生命周期：Obsolete
包装说明：R-PSIP-W4针数：4
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.82
Is Samacsys：N其他特性：UL RECOGNIZED
外壳连接：ISOLATED配置：BRIDGE, 4 ELEMENTS
二极管元件材料：SILICON二极管类型：BRIDGE RECTIFIER DIODE
JESD-30 代码：R-PSIP-W4JESD-609代码：e4
最大非重复峰值正向电流：60 A元件数量：4
相数：1端子数量：4
最高工作温度：165 °C最低工作温度：-55 °C
最大输出电流：2 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT APPLICABLE认证状态：Not Qualified
最大重复峰值反向电压：50 V表面贴装：NO
端子面层：SILVER端子形式：WIRE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT APPLICABLE
Base Number Matches：1

3N253-E4/72 数据手册

 浏览型号3N253-E4/72的Datasheet PDF文件第2页浏览型号3N253-E4/72的Datasheet PDF文件第3页浏览型号3N253-E4/72的Datasheet PDF文件第4页 
2KBPxxM-E4, 3N25x-E4  
Vishay General Semiconductor  
www.vishay.com  
Glass Passivated Single-Phase Bridge Rectifier  
FEATURES  
• UL recognition file number E54214  
• Ideal for printed circuit board  
• High surge current capability  
• High case dielectric strength  
−
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
~
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
~
+
+
~
~
−
Case Style KBPM  
TYPICAL APPLICATIONS  
General purpose use in AC/DC bridge full wave rectification  
for switching power supply, home appliances, office  
equipment, and telecommunication applications.  
PRIMARY CHARACTERISTICS  
Package  
KBPM  
2.0 A  
IF(AV)  
MECHANICAL DATA  
VRRM  
IFSM  
50 V to 1000 V  
60 A  
Case: KBPM  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E4 - RoHS-compliant, commercial grade  
IR  
5 μA  
VF at IF = 3.14 A  
TJ max.  
1.1 V  
Terminals: Silver plated leads, solderable per  
J-STD-002 and JESD22-B102  
165 °C  
In-line  
Diode variations  
Polarity: As marked on body  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M  
PARAMETER  
SYMBOL  
UNIT  
3N253  
3N254  
3N255  
3N256  
3N257  
3N258  
3N259  
Maximum repetitive peak reverse  
voltage  
VRRM  
50  
100  
200  
400  
600  
800  
1000  
V
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward output  
rectified current at TA = 55 °C  
IF(AV)  
2.0  
60  
A
A
Peak forward surge current single half  
sine-wave superimposed on rated  
load  
IFSM  
Rating for fusing (t < 8.3 ms)  
I2t  
15  
A2s  
°C  
Operating junction and storage  
temperature range  
TJ, TSTG  
-55 to +165  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M  
TEST  
CONDITIONS  
PARAMETER  
SYMBOL  
UNIT  
3N253  
3N254  
3N255  
3N256  
3N257  
3N258  
3N259  
Maximum instantaneous  
forward voltage drop per  
diode  
VF  
3.14 A  
1.1  
V
Maximum DC reverse  
current at rated DC  
blocking voltage per diode  
TA = 25 °C  
5.0  
IR  
μA  
pF  
TA = 125 °C  
500  
Typical junction  
capacitance per diode  
4.0 V,  
1 MHz  
TJ  
25  
Revision: 05-Aug-15  
Document Number: 88532  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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