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3N252-MLEADFREE PDF预览

3N252-MLEADFREE

更新时间: 2024-11-25 15:25:27
品牌 Logo 应用领域
CENTRAL 二极管
页数 文件大小 规格书
2页 458K
描述
Bridge Rectifier Diode, 1 Phase, 1.5A, 1000V V(RRM), Silicon,

3N252-MLEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:not_compliant
HTS代码:8541.10.00.80风险等级:5.14
最小击穿电压:1000 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSIP-W4JESD-609代码:e3
最大非重复峰值正向电流:30 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:1000 V表面贴装:NO
端子面层:MATTE TIN (315)端子形式:WIRE
端子位置:SINGLE处于峰值回流温度下的最长时间:10
Base Number Matches:1

3N252-MLEADFREE 数据手册

 浏览型号3N252-MLEADFREE的Datasheet PDF文件第2页 
3N247-M SERIES  
www.centralsemi.com  
SILICON BRIDGE RECTIFIERS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 3N247-M series  
types are silicon single phase, full wave bridge rectifiers  
designed for general purpose applications.  
MARKING: FULL PART NUMBER  
CASE B-M  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
3N  
3N  
3N  
3N  
3N  
3N  
SYMBOL 247-M 248-M 249-M 250-M 251-M 252-M UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
100  
100  
70  
200  
200  
140  
400  
400  
280  
600  
600  
420  
800  
800  
560  
1000  
1000  
700  
V
V
V
A
A
RRM  
V
R
RMS Reverse Voltage  
V
R(RMS)  
Average Forward Current (T =75°C)  
A
Peak Forward Surge Current  
I
1.5  
30  
O
I
FSM  
Operating and Storage  
Junction Temperature  
T , T  
-65 to +150  
°C  
J
stg  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
V =Rated V  
MIN  
MAX  
10  
UNITS  
μA  
I
R
R
RRM  
V
I =3.14A  
1.3  
V
F
F
R3 (25-February 2013)  

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