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3N252-E4/51 PDF预览

3N252-E4/51

更新时间: 2024-11-25 20:10:07
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 95K
描述
DIODE 1.5 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, CASE KBPM, 4 PIN, Bridge Rectifier Diode

3N252-E4/51 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PSIP-T4
针数:4Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.13
其他特性:UL RECOGNIZED最小击穿电压:1000 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PSIP-T4
JESD-609代码:e4最大非重复峰值正向电流:60 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:1000 V
子类别:Bridge Rectifier Diodes表面贴装:NO
端子面层:Silver (Ag)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

3N252-E4/51 数据手册

 浏览型号3N252-E4/51的Datasheet PDF文件第2页浏览型号3N252-E4/51的Datasheet PDF文件第3页浏览型号3N252-E4/51的Datasheet PDF文件第4页 
KBP005M thru KBP10M, 3N246 thru 3N252  
Vishay General Semiconductor  
Glass Passivated Single-Phase Bridge Rectifier  
FEATURES  
• UL recognition file number E54214  
• Ideal for printed circuit board  
e4  
• High surge current capability  
• High case dielectric strength  
~
+
~
~
• Solder dip 260 °C, 40 s  
~
+
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Case Style KBPM  
TYPICAL APPLICATIONS  
General purpose use in ac-to-dc bridge full wave  
rectification for switching power supply, home  
appliances, office equipment, and telecommunication  
applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.5 A  
VRRM  
IFSM  
IR  
50 V to 1000 V  
60 A  
MECHANICAL DATA  
Case: KBPM  
5 µA  
VF  
1.0 V  
Epoxy meets UL 94V-0 flammability rating  
TJ max.  
150 °C  
Terminals: Silver plated leads, solderable per  
J-STD-002 and JESD22-B102  
E4 suffix for consumer grade  
Polarity: As marked on body  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
KBP  
005M  
KBP  
01M  
KBP  
02M  
KBP  
04M  
KBP  
06M  
KBP  
08M  
KBP  
10M  
PARAMETER  
SYMBOL  
UNIT  
3N246 3N247 3N248 3N249 3N250 3N251 3N252  
Maximum repetitive peak reverse voltage (1)  
Maximum RMS voltage (1)  
Maximum DC blocking voltage (1)  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
100  
1000  
Maximum average forward output rectified  
current at TA = 40 °C  
IF(AV)  
1.5  
A
Peak forward surge current  
single half sine-wave (1)  
TA = 25 °C  
TJ = 150 °C  
60  
40  
IFSM  
I2t  
A
Rating for fusing (t < 8.3 ms)  
10  
A2s  
°C  
Operating junction and storage temperature range (1) TJ, TSTG  
- 55 to + 150  
Note:  
(1) JEDEC registered values  
Document Number: 88531  
Revision: 15-Apr-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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