Datasheet > 30ETH06FP-N3

30ETH06FP-N3

更新时间： 2024-11-24 12:20:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	157K
描述
Hyperfast Rectifier, 30 A FRED PtÂ®

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30ETH06FP-N3 数据手册

New Product

VS-30ETH06FP-F3, VS-30ETH06FP-N3

www.vishay.com

Vishay Semiconductors

Hyperfast Rectifier, 30 A FRED Pt^®

FEATURES

• Reduced Q_rrand soft recovery

• 175 °C T_Jmaximum

• For PFC CRM/CCM operation

• Fully isolated package (V_INS= 2500 V_RMS

• UL E78996 pending

)

Cathode

Anode

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified according

JEDEC-JESD47

TO-220 FULL-PAK

• Halogen-free according to IEC 61249-2-21 definition

(-N3 only)

PRODUCT SUMMARY

Package

TO-220FP

DESCRIPTION/APPLICATIONS

I_F(AV)

30 A

600 V

State of the art hyperfast recovery rectifiers designed with

optimized performance of forward voltage drop, hyperfast

recovery time and soft recovery.

V_R

V_Fat I_F

2.6 V

The planar structure and the platinum doped life time

control guarantee the best overall performance, ruggedness

and reliability characteristics.

t_rr(typ.)

T_Jmax.

Diode variation

23 ns

175 °C

Single die

These devices are intended for use in PFC boost stage in the

AC/DC section of SMPS, inverters or as freewheeling

diodes.

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

VALUES

600

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Operating junction and storage temperatures

I_F(AV)

T_C= 37 °C

T_J= 25 °C

I_FSM

220

T_J, T_Stg

- 65 to 175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 30 A

600

2.00

1.34

0.3

2.60

1.75

Forward voltage

V_F

I_R

I_F= 30 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

500

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

Revision: 16-Nov-11

Document Number: 93403

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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与30ETH06FP-N3相关器件

型号	品牌	获取价格	描述	数据表
30ETH06FPPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, TO-220AC, LEAD FREE, TO-22
30ETH06PBF	INFINEON	获取价格	Hyperfast Rectifier
30ETH06PBF	VISHAY	获取价格	Hyperfast Rectifier, 15 A FRED PtTM
30ETH06PBF_11	VISHAY	获取价格	Hyperfast Rectifier, 30 A FRED Pt
30ETH06S	VISHAY	获取价格	Hyperfast Rectifier, 30 A FRED PtTM
30ETH06S	INFINEON	获取价格	Hyperfast Rectifier
30ETH06SPBF	INFINEON	获取价格	Hyperfast Rectifier
30ETH06SPBF	VISHAY	获取价格	Hyperfast Rectifier, 30 A FRED PtTM
30ETH06SPBF_10	VISHAY	获取价格	Hyperfast Rectifier, 30 A FRED Pt
30ETH06STRL	VISHAY	获取价格	Hyperfast Rectifier, 30 A FRED PtTM

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