30ETH06STRRPBF

更新时间： 2024-11-24 02:58:15

品牌	Logo	应用领域
英飞凌 - INFINEON		整流二极管软恢复二极管超快速软恢复二极管
页数	文件大小	规格书
8页	288K
描述
Hyperfast Rectifier

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30ETH06STRRPBF 数据手册

Bulletin PD-21064 rev. B 11/06

30ETH06SPbF

30ETH06-1PbF

Hyperfast Rectifier

Features

•

Hyperfastfast Recovery Time

Low Forward Voltage Drop

Low Leakage Current

125°COperatingJunctionTemperature

Dual Diode Center Tap

t_rr= 28ns typ.

I_F(AV)= 30Amp

V_R= 600V

Lead-Free ("PbF" suffix)

Description/Applications

State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast

recover time, and soft recovery.

The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness

and reliability characteristics.

These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling

diodes.

The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

Absolute Maximum Ratings

Parameters

Max

600

Units

V_RRM

I_F(AV)

I_FSM

T_J

Peak Repetitive Reverse Voltage

Average Rectifier Forward Current

@ T_C= 103°C

@ T_J= 25°C

NonRepetitivePeakSurgeCurrent

OperatingJunction Temperature

Operating StorageTemperature

200

- 65 to 125

- 65 to 150

°C

T_STG

Case Styles

30ETH06-1PbF

30ETH06SPbF

Base

Cathode

N/C

Anode

N/C

D²PAK

TO-262

www.irf.com

12 3 4 5 6 7 8

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