Datasheet > 30-F206R6A050SB-M442E

30-F206R6A050SB-M442E

更新时间： 2022-02-26 13:19:48

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
6页	605K
描述
IGBT3 technology for low saturation losses

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30-F206R6A050SB-M442E 数据手册

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F206R6A050SB

target datasheet

flowPACK 2

600V/50A

Features

flow2 housing

● Inverter, blocking diodes

● Built-in thermistor

● IGBT3 technology for low saturation losses

Target Applications

Schematic

● Power Regeneration

Types

● 30-F206R6A050SB-M442E

● 30-F206R6A050SB01-M442E10

Maximum Ratings

T_j=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Blocking Diode

V_RRM

I_FAV

Repetitive peak reverse voltage

DC forward current

1600

T_h=80°C

T_c=80°C

160

T_j=T_jmax

t_p=10ms

T_j=T_jmax

I_FSM

Surge forward current

I2t-value

1400

9800

T_j=25°C

I²t

A²s

T_h=80°C

T_c=80°C

135

206

P_tot

Power dissipation per Diode

Maximum Junction Temperature

T_jmax

150

°C

Inverter Transistor

V_CE

I_C

Collector-emitter break down voltage

DC collector current

600

T_h=80°C

T_c=80°C

T_j=T_jmax

I_Cpulse

t_plimited by T_jmax

Repetitive peak collector current

Turn off safe operating area

Power dissipation per IGBT

Gate-emitter peak voltage

Short circuit ratings

150

VCE ≤ 600V, Tj ≤ Top max

T_h=80°C

T_c=80°C

116

176

P_tot

T_j=T_jmax

V_GE

±20

t_SC

T_j≤150°C

μs

V_CC

V_GE=15V

360

T_jmax

Maximum Junction Temperature

175

°C

Revision: 3

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