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30ETH06FPPBF PDF预览

30ETH06FPPBF

更新时间: 2024-11-24 13:00:11
品牌 Logo 应用领域
威世 - VISHAY 二极管局域网软恢复二极管超快速软恢复二极管
页数 文件大小 规格书
7页 109K
描述
Rectifier Diode, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, TO-220AC, LEAD FREE, TO-220, FULL PACK-3

30ETH06FPPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AC
包装说明:LEAD FREE, TO-220, FULL PACK-3针数:3
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:5.37其他特性:HIGH RELIABILITY, FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用:HYPERFAST SOFT RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.035 µs
表面贴装:NO端子面层:MATTE TIN OVER NICKEL
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

30ETH06FPPBF 数据手册

 浏览型号30ETH06FPPBF的Datasheet PDF文件第2页浏览型号30ETH06FPPBF的Datasheet PDF文件第3页浏览型号30ETH06FPPBF的Datasheet PDF文件第4页浏览型号30ETH06FPPBF的Datasheet PDF文件第5页浏览型号30ETH06FPPBF的Datasheet PDF文件第6页浏览型号30ETH06FPPBF的Datasheet PDF文件第7页 
30ETH06  
Vishay High Power Products  
Hyperfast Rectifier,  
30 A FRED PtTM  
FEATURES  
• Hyperfast recovery time  
• Low forward voltage drop  
Base  
common  
cathode  
• Low leakage current  
2
• 175 °C operating junction temperature  
• Dual diode center tap  
• Designed and qualified for industrial level  
DESCRIPTION/APPLICATIONS  
1
3
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time and soft recovery.  
TO-220AC  
Cathode  
Anode  
The planar structure and the platinum doped life time  
control guarantee the best overall performance, ruggedness  
and reliability characteristics.  
These devices are intended for use in PFC boost stage in  
the AC-DC section of SMPS, inverters or as freewheeling  
diodes.  
PRODUCT SUMMARY  
trr (typical)  
28 ns  
30 A  
IF(AV)  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
VR  
600 V  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
VALUES  
600  
UNITS  
Peak repetitive reverse voltage  
V
Average rectified forward current  
Non-repetitive peak surge current  
Operating junction and storage temperatures  
IF(AV)  
TC = 103 °C  
TJ = 25 °C  
30  
A
IFSM  
200  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 µA  
IF = 30 A  
600  
-
-
V
-
-
-
-
-
-
2.0  
1.34  
0.3  
60  
2.6  
1.75  
50  
500  
-
Forward voltage  
VF  
IR  
IF = 30 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
µA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
33  
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
Document Number: 93018  
Revision: 23-Jun-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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