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30ETH06SPBF PDF预览

30ETH06SPBF

更新时间: 2024-11-24 06:18:31
品牌 Logo 应用领域
威世 - VISHAY 二极管软恢复二极管超快速软恢复二极管
页数 文件大小 规格书
7页 125K
描述
Hyperfast Rectifier, 30 A FRED PtTM

30ETH06SPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.25
其他特性:HIGH RELIABILITY, FREE WHEELING DIODE应用:HYPERFAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.75 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

30ETH06SPBF 数据手册

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30ETH06SPbF/30ETH06-1PbF  
Vishay High Power Products  
Hyperfast Rectifier,  
30 A FRED PtTM  
FEATURES  
• Hyperfast recovery time  
30ETH06-1PbF  
30ETH06SPbF  
Available  
• Low forward voltage drop  
RoHS*  
• Low leakage current  
COMPLIANT  
• 125 °C operating junction temperature  
• Dual diode center tap  
Base  
cathode  
• Lead (Pb)-free (“PbF” suffix)  
• Designed and qualified for Q101 level  
2
2
DESCRIPTION/APPLICATIONS  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time and soft recovery.  
The planar structure and the platinum doped life time  
control guarantee the best overall performance, ruggedness  
and reliability characteristics.  
1
N/C  
3
1
N/C  
3
Anode  
Anode  
D2PAK  
TO-262  
These devices are intended for use in PFC boost stage in  
the AC-DC section of SMPS, inverters or as freewheeling  
diodes.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
PRODUCT SUMMARY  
trr (typical)  
28 ns  
IF(AV)  
30 A  
VR  
600 V  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Peak repetitive reverse voltage  
V
Average rectified forward current  
Non-repetitive peak surge current  
Operating junction and storage temperatures  
IF(AV)  
TC = 103 °C  
TJ = 25 °C  
30  
A
IFSM  
200  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 µA  
IF = 30 A  
600  
-
-
V
-
-
-
-
-
-
2.0  
1.34  
0.3  
60  
2.6  
1.75  
50  
500  
-
Forward voltage  
VF  
IR  
IF = 30 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
µA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
33  
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94020  
Revision: 26-May-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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