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30CTH02FPPBF PDF预览

30CTH02FPPBF

更新时间: 2024-09-16 06:18:15
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网超快速恢复二极管
页数 文件大小 规格书
7页 115K
描述
Hyperfast Rectifier, 2 x 15 A FRED PtTM

30CTH02FPPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, TO-220, FULL PACK-3针数:3
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:5.63其他特性:FREE WHEELING DIODE, SNUBBER DIODE, LOW LEAKAGE CURRENT
应用:HYPER FAST RECOVERY外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.85 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:200 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40Base Number Matches:1

30CTH02FPPBF 数据手册

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30CTH02PbF/30CTH02FPPbF  
Vishay High Power Products  
Hyperfast Rectifier,  
2 x 15 A FRED PtTM  
FEATURES  
• Hyperfast recovery time  
30CTH02PbF  
30CTH02FPPbF  
Pb-free  
• Low forward voltage drop  
Available  
• Low leakage current  
RoHS*  
• 175 °C operating junction temperature  
• Fully isolated package (VINS = 2500 VRMS  
• Lead (Pb)-free (“PbF” suffix)  
COMPLIANT  
)
Base  
common  
cathode  
• TO-220 designed and qualified for AEC Q101 level  
• TO-220FP designed and qualified for industrial level  
2
2
2
DESCRIPTION/APPLICATIONS  
Common  
Common  
cathode  
cathode  
200 V series are the state of the art hyperfast recovery  
rectifiers specifically designed with optimized performance  
of forward voltage drop and hyperfast recovery time.  
The planar structure and the platinum doped life time  
control, guarantee the best overall performance,  
ruggedness and reliability characteristics.  
1
3
1
3
Anode  
Anode  
Anode  
Anode  
TO-220AB  
TO-220 FULL-PAK  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, dc-to-dc converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
PRODUCT SUMMARY  
trr (maximum)  
30 ns  
2 x 15 A  
200 V  
IF(AV)  
VR  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
VRRM  
200  
V
per diode  
TC = 159 °C  
15  
Average rectified forward current  
Non-repetitive peak surge current  
(FULL-PAK) per diode  
per device  
IF(AV)  
TC = 125 °C  
A
30  
200  
IFSM  
TJ = 25 °C  
Operating junction and storage temperatures  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 µA  
IF = 15 A  
200  
-
-
V
-
-
-
-
-
-
0.92  
0.78  
-
1.05  
0.85  
10  
Forward voltage  
VF  
IR  
IF = 15 A, TJ = 125 °C  
VR = VR rated  
Reverse leakage current  
µA  
TJ = 125 °C, VR = VR rated  
VR = 200 V  
5
300  
-
Junction capacitance  
Series inductance  
CT  
LS  
57  
8
pF  
nH  
Measured lead to lead 5 mm from package body  
-
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94014  
Revision: 11-Sep-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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