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30CTH02PBF_11 PDF预览

30CTH02PBF_11

更新时间: 2024-11-06 07:40:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 188K
描述
Hyperfast Rectifier, 2 x 10 A FRED Pt

30CTH02PBF_11 数据手册

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VS-30CTH02PbF, VS-30CTH02FPPbF  
Vishay Semiconductors  
Hyperfast Rectifier, 2 x 10 A FRED Pt®  
FEATURES  
• Hyperfast recovery time  
• Low forward voltage drop  
• 175 °C operating junction temperature  
• Low leakage current  
TO-220AB  
TO-220 FULL-PAK  
• Fully isolated package (VINS = 2500 VRMS  
• UL E78996 pending  
)
Base  
common  
cathode  
2
• Compliant to RoHS Directive 2002/95/EC  
• AEC-Q101 qualified (TO-220)  
2
2
• Designed and qualified for industrial level (TO-220FP)  
Common  
Common  
cathode  
cathode  
1
3
1
3
DESCRIPTION/APPLICATIONS  
Anode  
Anode  
Anode  
Anode  
200 V series are the state of the art hyperfast recovery  
rectifiers specifically designed with optimized performance  
of forward voltage drop and hyperfast recovery time.  
VS-30CTH02PbF  
VS-30CTH02FPPbF  
PRODUCT SUMMARY  
The planar structure and the platinum doped life time  
control, guarantee the best overall performance,  
ruggedness and reliability characteristics.  
Package  
TO-220AB, TO-220FP  
2 x 15 A  
IF(AV)  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, DC/DC converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
VR  
200 V  
VF at IF  
1.05 V  
t
rr typ.  
See Recovery table  
175 °C  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
TJ max.  
Diode variation  
Common cathode  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
VRRM  
200  
V
per diode  
TC = 159 °C  
TC = 125 °C  
15  
Average rectified forward current  
Non-repetitive peak surge current  
(FULL-PAK) per diode  
per device  
IF(AV)  
A
30  
200  
IFSM  
TJ = 25 °C  
Operating junction and storage temperatures  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 15 A  
200  
-
-
V
-
-
-
-
-
-
0.92  
0.78  
-
1.05  
0.85  
10  
Forward voltage  
VF  
IR  
IF = 15 A, TJ = 125 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 125 °C, VR = VR rated  
VR = 200 V  
5
300  
-
Junction capacitance  
Series inductance  
CT  
LS  
57  
8
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Document Number: 94014  
Revision: 28-Apr-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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