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30CTH02TRLPBF PDF预览

30CTH02TRLPBF

更新时间: 2024-11-06 13:04:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 117K
描述
Rectifier Diode, 1 Phase, 2 Element, 15A, 200V V(RRM), Silicon, TO-220AB, TO-220AB, 3 PIN

30CTH02TRLPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life零件包装代码:TO-220AB
包装说明:TO-220AB, 3 PIN针数:3
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:5.46其他特性:FREE WHEELING DIODE
应用:HYPER FAST RECOVERY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e2
最大非重复峰值正向电流:200 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.035 µs
表面贴装:NO端子面层:TIN COPPER
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

30CTH02TRLPBF 数据手册

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30CTH02/30CTH02FP  
Vishay High Power Products  
Hyperfast Rectifier,  
2 x 15 A FRED PtTM  
FEATURES  
30CTH02  
30CTH02FP  
• Hyperfast recovery time  
• Low forward voltage drop  
• Low leakage current  
• 175 °C operating junction temperature  
• Fully isolated package (VINS = 2500 VRMS  
)
Base  
common  
cathode  
• TO-220 designed and qualified for AEC Q101 level  
• TO-220FP designed and qualified for industrial level  
2
DESCRIPTION/APPLICATIONS  
2
2
Common  
Common  
200 V series are the state of the art hyperfast recovery  
rectifiers specifically designed with optimized performance  
of forward voltage drop and hyperfast recovery time.  
The planar structure and the platinum doped life time  
control, guarantee the best overall performance,  
ruggedness and reliability characteristics.  
cathode  
cathode  
1
3
1
3
Anode  
Anode  
Anode  
Anode  
TO-220AB  
TO-220 FULL-PAK  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, dc-to-dc converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
PRODUCT SUMMARY  
trr (maximum)  
30 ns  
2 x 15 A  
200 V  
IF(AV)  
VR  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
VRRM  
200  
V
per diode  
TC = 159 °C  
15  
Average rectified forward current  
Non-repetitive peak surge current  
(FULL-PAK) per diode  
per device  
IF(AV)  
TC = 125 °C  
A
30  
200  
IFSM  
TJ = 25 °C  
Operating junction and storage temperatures  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 µA  
IF = 15 A  
200  
-
-
V
-
-
-
-
-
-
0.92  
0.78  
-
1.05  
0.85  
10  
Forward voltage  
VF  
IR  
IF = 15 A, TJ = 125 °C  
VR = VR rated  
Reverse leakage current  
µA  
TJ = 125 °C, VR = VR rated  
VR = 200 V  
5
300  
-
Junction capacitance  
Series inductance  
CT  
LS  
57  
8
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Document Number: 93014  
Revision: 05-Sep-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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