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2SK971 PDF预览

2SK971

更新时间: 2024-11-14 21:55:35
品牌 Logo 应用领域
日立 - HITACHI 晶体晶体管功率场效应晶体管局域网
页数 文件大小 规格书
7页 41K
描述
Silicon N-Channel MOS FET

2SK971 数据手册

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2SK971  
Silicon N-Channel MOS FET  
Application  
TO–220AB  
High speed power switching  
Features  
• Low on-resistance  
• High speed switching  
2
1
2
3
• Low drive current  
• 4 V gate drive device  
1. Gate  
2. Drain  
(Flange)  
3. Source  
– Can be driven from 5 V source  
• Suitable for motor drive, DC-DC converter,  
power switch and solenoid drive  
1
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Ratings  
Unit  
———————————————————————————————————————————  
Drain to source voltage  
V
60  
V
DSS  
———————————————————————————————————————————  
Gate to source voltage  
V
±20  
V
GSS  
———————————————————————————————————————————  
Drain current  
I
15  
A
D
———————————————————————————————————————————  
Drain peak current  
I
*
60  
A
D(pulse)  
———————————————————————————————————————————  
Body to drain diode reverse drain current  
I
15  
A
DR  
———————————————————————————————————————————  
Channel dissipation  
Pch**  
40  
W
———————————————————————————————————————————  
Channel temperature  
Tch  
150  
°C  
———————————————————————————————————————————  
Storage temperature  
Tstg  
–55 to +150  
°C  
———————————————————————————————————————————  
PW 10 µs, duty cycle 1 %  
** Value at T = 25 °C  
*
C

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