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2SK974S PDF预览

2SK974S

更新时间: 2024-10-01 21:55:35
品牌 Logo 应用领域
日立 - HITACHI /
页数 文件大小 规格书
7页 44K
描述
Silicon N-Channel MOS FET

2SK974S 数据手册

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2SK974 L , 2SK974 S  
Silicon N-Channel MOS FET  
Application  
4
DPAK-1  
High speed power switching  
4
Features  
1
2
3
1
• Low on-resistance  
• High speed switching  
• Low drive current  
2
3
2, 4  
S type  
L type  
• 4 V gate drive device  
– Can be driven from 5 V source  
• Suitable for motor drive, DC-DC converter,  
power switch and solenoid drive  
1. Gate  
1
2. Drain  
3. Source  
4. Drain  
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Ratings  
Unit  
———————————————————————————————————————————  
Drain to source voltage  
V
60  
V
DSS  
———————————————————————————————————————————  
Gate to source voltage  
V
±20  
V
GSS  
———————————————————————————————————————————  
Drain current  
I
3
A
D
———————————————————————————————————————————  
Drain peak current  
I
*
12  
A
D(peak)  
———————————————————————————————————————————  
Body to drain diode reverse drain current  
I
3
A
DR  
———————————————————————————————————————————  
Channel dissipation  
Pch**  
20  
W
———————————————————————————————————————————  
Channel temperature  
Tch  
150  
°C  
———————————————————————————————————————————  
Storage temperature  
Tstg  
–55 to +150  
°C  
———————————————————————————————————————————  
*
PW 10 µs, duty cycle 1 %  
** Value at T = 25 °C  
C

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