2SK974(S)TL

更新时间： 2024-10-02 12:58:47

品牌	Logo	应用领域
日立 - HITACHI		/
页数	文件大小	规格书
7页	44K
描述
Power Field-Effect Transistor, 3A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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数据手册

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2SK974(S)TL 数据手册

2SK974 L , 2SK974 S

Silicon N-Channel MOS FET

Application

DPAK-1

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

2, 4

S type

L type

• 4 V gate drive device

– Can be driven from 5 V source

• Suitable for motor drive, DC-DC converter,

power switch and solenoid drive

1. Gate

2. Drain

3. Source

4. Drain

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

———————————————————————————————————————————

Drain to source voltage

DSS

———————————————————————————————————————————

Gate to source voltage

±20

GSS

———————————————————————————————————————————

Drain current

———————————————————————————————————————————

Drain peak current

D(peak)

———————————————————————————————————————————

Body to drain diode reverse drain current

———————————————————————————————————————————

Channel dissipation

Pch**

———————————————————————————————————————————

Channel temperature

Tch

150

°C

———————————————————————————————————————————

Storage temperature

Tstg

–55 to +150

°C

———————————————————————————————————————————

PW ≤ 10 µs, duty cycle ≤ 1 %

** Value at T = 25 °C

12 3 4 5 6 7

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与2SK974(S)TL相关器件

型号	品牌	获取价格	描述	数据表
2SK974(S)TR	HITACHI	获取价格	Power Field-Effect Transistor, 3A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal
2SK974(S)TR	RENESAS	获取价格	3A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET
2SK974L	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK974S	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK975	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK975	RENESAS	获取价格	Silicon N Channel MOS FET
2SK975TZ-E	RENESAS	获取价格	Silicon N Channel MOS FET
2SK979	ETC	获取价格	2SK979
2SK980	HITACHI	获取价格	Small Signal Field-Effect Transistor, 0.04A I(D), 1-Element, N-Channel, Silicon, Junction
2SK980F	HITACHI	获取价格	SMALL SIGNAL, FET, MPAK-3