生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.3 | 配置: | SINGLE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 2 A |
最大漏源导通电阻: | 0.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK973(S)TR | HITACHI |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal- | |
2SK973(S)TR | RENESAS |
获取价格 |
2 A, 60 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET | |
2SK973L | HITACHI |
获取价格 |
Silicon N-Channel MOS FET | |
2SK973S | HITACHI |
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Silicon N-Channel MOS FET | |
2SK974 | HITACHI |
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Silicon N-Channel MOS FET | |
2SK974 | TOSHIBA |
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高速高压MOS大功率场效应管 | |
2SK974(L) | RENESAS |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal | |
2SK974(S) | RENESAS |
获取价格 |
3A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET | |
2SK974(S)TL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal | |
2SK974(S)TL | RENESAS |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal |