生命周期: | Not Recommended | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.3 | Is Samacsys: | N |
配置: | SINGLE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 3 A | 最大漏源导通电阻: | 0.25 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK974(S) | RENESAS |
获取价格 |
3A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET | |
2SK974(S)TL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal | |
2SK974(S)TL | RENESAS |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal | |
2SK974(S)TR | HITACHI |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal | |
2SK974(S)TR | RENESAS |
获取价格 |
3A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET | |
2SK974L | HITACHI |
获取价格 |
Silicon N-Channel MOS FET | |
2SK974S | HITACHI |
获取价格 |
Silicon N-Channel MOS FET | |
2SK975 | HITACHI |
获取价格 |
Silicon N-Channel MOS FET | |
2SK975 | RENESAS |
获取价格 |
Silicon N Channel MOS FET | |
2SK975TZ-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET |