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2SK956-01 PDF预览

2SK956-01

更新时间: 2024-11-15 20:13:59
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
1页 122K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

2SK956-01 技术参数

生命周期:Active零件包装代码:TO-3P
包装说明:,针数:2
Reach Compliance Code:unknown风险等级:5.74
配置:Single最大漏极电流 (Abs) (ID):9 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
子类别:FET General Purpose Power表面贴装:NO
Base Number Matches:1

2SK956-01 数据手册

  
C
o l l m e r  
Semiconductor  
MOS-FET, High Voltage Diodes  
N-Channel Silicon Power MOS-FET  
c
c
c
F-I Series = Low RDS(ON)  
F-II Series = VGS ±30 V, Reduced Turn Off Time  
FAP-II Series = High Avalanche Ruggedness  
c
c
c
F-III Series = Logic Level, High gfs  
FAP-III = Logic Level, High Avalanche Ruggedness  
FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V  
c
c
c
FAP-IIA = Reduced Turn Off Time  
FAP-IIIBH = High Speed Non Logic  
FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V  
Ratings  
Characteristics  
Mfr.Õs  
Series  
Type  
R
DS(ON) (½) (Max.)  
VGS=10V  
Package  
V
(V)  
DSS  
I
D
P
(W)  
D
C
(pf)  
iss  
C
(pf)  
oss  
t
on  
toff  
(ns)  
(A)  
(ns)  
VGS=4V  
2SJ314-01L  
2SJ314-01S  
2SK2248-01L  
2SK2248-01S  
2SK2687-01  
2SK2893-01  
2SK2900-01  
2SK2690-01  
2SK2906-01  
2SK3270-01  
2SK3271-01  
2SK3216-01  
2SK3217-01MR  
2SK3218-01  
2SK3219-01MR  
2SK2521-01  
2SK3262-01MR  
2SK900  
FAP-III  
FAP-III  
FAP-III  
FAP-III  
FAP-III  
FAP-IIIB  
FAP-IIIBH  
FAP-III  
FAP-IIIBH  
Trench  
Trench  
FAP-IIIBH  
FAP-IIIBH  
FAP-IIIBH  
FAP-IIIBH  
FAP-II  
FAP-IIIB  
F-I  
F-I  
F-II  
FAP-IIA  
FAP-IIS  
FAP-IIS  
F-I  
FAP-IIA  
FAP-II  
Ð60  
Ð60  
30  
30  
30  
30  
60  
60  
60  
Ð5.0  
Ð5.0  
35.0  
35.0  
50.0  
100.0  
45.0  
80.0  
100.0  
80.0  
100.0  
45.0  
50.0  
35.0  
40.0  
18.0  
20.0  
12.0  
30.0  
20.0  
5.0  
15.0  
10.0  
15.0  
16.0  
4.0  
9.0  
9.0  
8.0  
9.0  
4.0  
4.0  
20  
20  
60  
60  
60  
0.480  
0.480  
0.037  
0.037  
0.017  
0.007  
Ñ
0.017  
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
0.15  
Ñ
Ñ
Ñ
Ñ
Ñ
0.300  
0.300  
0.022  
0.022  
0.010  
0.004  
0.140  
0.010  
0.007  
0.006  
0.006  
0.026  
0.025  
0.048  
0.043  
0.180  
0.100  
0.300  
0.100  
0.350  
1.600  
0.550  
0.900  
0.380  
0.550  
4.000  
1.500  
1.500  
2.000  
1.400  
3.600  
3.600  
750  
750  
300  
300  
53  
53  
270  
270  
720  
720  
520  
1270  
200  
450  
470  
285  
285  
240  
265  
270  
263  
150  
520  
260  
1000  
740  
100  
230  
60  
K-PACK L  
K-PACK S  
K-PACK L  
K-PACK S  
TO220  
TO3P  
TO220  
TO3P  
TO3P  
TO-220  
TO3P  
TO220  
TO-220F15  
TO220  
TO-220F15  
TO220  
TO-220F15  
TO220  
TO3P  
2630  
2630  
4130  
9900  
3450  
5250  
8100  
9000  
9000  
4800  
4800  
3900  
3980  
1650  
2550  
1800  
3900  
3300  
1500  
2100  
950  
4000  
4950  
450  
2100  
1200  
1200  
3300  
1950  
1950  
1200  
1200  
1950  
4950  
1370  
1870  
3150  
1250  
1250  
1140  
1140  
800  
830  
330  
435  
300  
900  
480  
130  
380  
180  
500  
470  
75  
300  
180  
180  
320  
188  
188  
103  
260  
110  
143  
400  
250  
250  
186  
230  
158  
174  
150  
85  
150  
60  
125  
150  
135  
155  
80  
70  
80  
70  
50  
45  
80  
150  
150  
60  
50  
80  
125  
100  
80  
150  
150  
150  
150  
80  
60  
60  
100  
100  
150  
150  
200  
200  
250  
250  
450  
500  
500  
500  
500  
600  
800  
800  
800  
900  
900  
1000  
1000  
75  
2SK902  
200  
375  
55  
220  
25  
130  
165  
20  
425  
30  
30  
130  
55  
2SK1017-01  
2SK2021-01  
2SK2642-01MR  
2SK2757-01  
2SK725  
2SK1941-01R  
2SK2646-01  
2SK956-01  
2SK2648-01  
2SK2654-01  
2SK2082-01  
2SK1986-01  
2SK2258-01  
TO3P  
TO220  
TO220F15  
TO220  
TO3P  
TO3PF  
TO220  
TO3P  
TO3P  
TO3P  
TO3P  
TO220  
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
13  
440  
420  
50  
690  
95  
FAP-II  
FAP-IIS  
FAP-IIS  
FAP-IIA  
FAP-II  
95  
320  
160  
160  
Ñ
Ñ
150  
150  
FAP-II  
100  
55  
TO3P  
Fast Recovery High Voltage Silicon Rectifiers  
Repetitive  
Peak Reverse  
Voltage  
Average  
Forward  
Current  
Non-Repetitive  
Peak Surge  
Current  
Maximum Forward  
Voltage Drop  
Maximum Reverse  
Current Repetitive  
Maximum Junction  
Capacitance  
(at VRRM = 0V, T = 25¡C)  
Mfr.Õs  
Type  
(at 1 mA, T  
a
= 25¡C)  
(at VRRM, T  
a
= 25¡C)  
a
VRRM  
Io*  
IFSM**  
VFM  
IRRM  
@ 1 MHz  
kV  
mA  
A
Volts  
µA  
pF  
ESJC30-08  
CS57-04A  
CS54-08A  
CS52-12A  
CS52-14A  
CS56-24  
12  
4
8
12  
14  
24  
300  
25  
25  
10  
10  
10  
15.0  
1.0  
1.0  
0.5  
0.5  
0.5  
16.0  
15.0  
30.0  
45.0  
51.0  
75.0  
10  
1
1
1
1
Ñ
2
2
1
1
1
1
Notes: *Single phase; half sine wave in oil bath or filled epoxy at ambient temperature 25¡C. **1/2 cycle, 60 Hz at full load. Reverse Recovery Time: ÒAÓ Type Ñ 80 nsec max. @ Ta = 25¡C, IF = 2 mA, IR = 1 mA; Non ÒAÓ Type Ñ 100 nsec max. @ Ta =  
25¡C, I  
F
= 2 mA, I  
R
= 1 mA. Storage and Operating Junction Temperature, Tj: Ð65¡C to +150¡C. Packaging: Bulk or tape and reel available (please specify).  
Same  
Day  
c
803  
Shipments  

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