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2SK3991-ZK-E1 PDF预览

2SK3991-ZK-E1

更新时间: 2024-09-10 15:25:15
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
8页 146K
描述
Small Signal Field-Effect Transistor, 30A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, MP-3ZK, 3 PIN

2SK3991-ZK-E1 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3991  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
ORDERING INFORMATION  
The 2SK3991 is N-channel MOS FET device that  
features a low on-state resistance and excellent switching  
characteristics, and designed for low voltage high current  
applications such as DC/DC converter with synchronous  
rectifier.  
PART NUMBER  
2SK3991  
PACKAGE  
TO-251 (MP-3)  
TO-252 (MP-3ZK)  
2SK3991-ZK  
FEATURES  
Low on-state resistance  
RDS(on)1 = 13.0 mMAX. (VGS = 10 V, ID = 15 A)  
Low Ciss: Ciss = 830 pF TYP.  
5 V drive available  
(TO-251)  
(TO-252)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
25  
±20  
V
V
±30  
A
±120  
21  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation  
W
W
°C  
°C  
A
PT2  
1.0  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
55 to +150  
15  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
22.5  
mJ  
Notes 1. PW 10 µs, Duty Cycle 1%  
2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 , VGS = 20 0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D17434EJ2V0DS00 (2nd edition)  
The mark shows major revised points.  
Date Published February 2005 NS CP(K)  
Printed in Japan  
2005  

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