是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-F3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.84 |
配置: | SINGLE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 0.1 A | 最大漏源导通电阻: | 6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F3 |
JESD-609代码: | e6 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Tin/Bismuth (Sn/Bi) | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3974-01L | FUJI |
获取价格 |
Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal- | |
2SK3974-01S | FUJI |
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Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal- | |
2SK3977 | SANYO |
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N-Channel Silicon MOSFET General-Purpose Switching Device | |
2SK3978 | SANYO |
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N-Channel Silicon MOSFET General-Purpose Switching Device | |
2SK3979 | SANYO |
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N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
2SK3979(TP) | ONSEMI |
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TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,6A I(D),TO-251 | |
2SK3979(TP-FA) | ONSEMI |
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TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,6A I(D),TO-252 | |
2SK3979TP | ONSEMI |
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Small Signal Field-Effect Transistor, 6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal- | |
2SK3979TP-FA | ONSEMI |
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Small Signal Field-Effect Transistor, 6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal- | |
2SK398 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 10A I(D) | TO-3 |