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2SK3973 PDF预览

2SK3973

更新时间: 2024-10-02 19:18:23
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
2页 326K
描述
Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SSSMINI3-F1, 3 PIN

2SK3973 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
配置:SINGLE最小漏源击穿电压:20 V
最大漏极电流 (ID):0.1 A最大漏源导通电阻:6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F3
JESD-609代码:e6湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK3973 数据手册

 浏览型号2SK3973的Datasheet PDF文件第2页 
Silicon MOSFETs (Small Signal)  
2SK3973  
Silicon N-channel MOSFET  
For switching circuits  
Unit: mm  
Features  
+0.05  
–0.02  
+0.05  
0.10  
–0.02  
0.33  
Low ON resistance Ron  
3
High-speed switching  
Allowing 1.8 V drive  
SSSMini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing  
+0.05  
1
2
0.23  
–0.02  
(0.40)(0.40)  
0.80±0.05  
1.20±0.05  
Absolute Maximum Ratings T
a
= 25
°
C  
Parameter  
Drain-source surrender voltage  
Gate-source surrender voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Rating  
20  
Unit  
V
5°  
V
±12  
100  
mA  
mA  
mW  
°
C  
Peak drain current  
IDP  
200  
1: Gate  
2: Source  
3: Drain  
Drain power dissipation  
Channel temperature  
Storage temperature  
PD  
100  
SSSMini3-F1 Package  
T
ch  
125  
Marking Symbol: 5V  
T
stg  
55 to +125  
°
C  
Electrical Characteristics T
a
= 25
°
C
±
3
°
C  
Parameter  
Drain-source surrender voltage  
Drain-source cutoff current  
Gate-source cutoff current  
Gate threshold voltage  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
V
VDSS  
IDSS  
IGSS  
VTH  
ID = 10 µA, VGS = 0  
VDS = 10 V, VGS = 0  
VGS ±10 V, VDS = 0  
ID = 50 µA, VDS = 5.0 V  
ID = 1 mA, VGS = 1.8 V  
20  
1.0  
±10  
1.2  
13  
6
µA  
µA  
V
0.4  
0.8  
6
Drain-source ON resistance  
Forward transfer admittance  
RDS(on) ID = 10 mA, VGS = 2.5 V  
ID = 10 mA, VGS = 4.0 V  
4
3
4
ID = 10 mA, VDS = 3 V  
20  
55  
mS  
pF  
Yfs  
Short-circuit input capacitance  
(Common source)  
Ciss  
10  
13  
Short-circuit output capacitance  
(Common source)  
VDS = 3 V, VGS = 0, f = 1 MHz  
Coss  
pF  
Reversetransfercapacitance(Commonsource)  
Turn-on time
*  
Crss  
ton  
5
pF  
ns  
ns  
VDD = 3 V, VGS = 0 V to 3 V, ID = 10 mA  
VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA  
250  
480  
Turn-off time
*  
toff  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : ton , t
off
measurement circuit  
*
VOUT  
290 Ω  
90%  
10%  
V
GS  
VOUT  
V
GS
=
0 V to 3 V  
10%  
100 µF  
VDD
=
3 V  
90%  
50 Ω  
t
t
off  
Publication date: June 2005  
SJF00047AED  
1

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