生命周期: | Active | 零件包装代码: | TO-220F |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.29.00.95 |
风险等级: | 5.76 | Is Samacsys: | N |
雪崩能效等级(Eas): | 237.3 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (Abs) (ID): | 3 A | 最大漏极电流 (ID): | 3 A |
最大漏源导通电阻: | 3.3 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 21 W | 最大脉冲漏极电流 (IDM): | 12 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK399 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 10A I(D) | TO-247VAR |
![]() |
2SK3990-01L | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET |
![]() |
2SK3990-01S | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET |
![]() |
2SK3990-01SJ | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET |
![]() |
2SK3991 | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOSFET |
![]() |
2SK3991-AZ | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 30A I(D), 25V, 1-Element, N-Channel, Silicon, Metal- |
![]() |
2SK3991-S15-AZ | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,25V V(BR)DSS,30A I(D),TO-251 |
![]() |
2SK3991-ZK | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOSFET |
![]() |
2SK3991-ZK-E1 | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 30A I(D), 25V, 1-Element, N-Channel, Silicon, Metal- |
![]() |
2SK3991-ZK-E1-AZ | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 30A I(D), 25V, 1-Element, N-Channel, Silicon, Metal- |
![]() |