2SK3985-01

更新时间： 2024-01-12 09:42:31

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
4页	293K
描述
N-CHANNEL SILICON POWER MOSFET

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中文翻译

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数据手册

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2SK3985-01 数据手册

2SK3985-01

FUJI POWER MOSFET

200511

N-CHANNEL SILICON POWER MOSFET

Super FAP-G Series

Outline Drawings [mm]

TO-220AB

Features

High speed switching

No secondary breadown

Avalanche-proof

Low on-resistance

Low driving power

Applications

Switching regulators

DC-DC converters

UPS (Uninterruptible Power Supply)

Maximum ratings and characteristicAbsolute maximum ratings

(Tc=25°C unless otherwise specified)

Item

Symbol

VDS

Ratings

500

Unit

Remarks

Drain-source voltage

VGS=-30V

VDSX

500

Continuous drain current

Pulsed drain current

3.6

ID(puls]

VGS

±14.4

±30

Gate-source voltage

Note *1

Note *2

Note *3

Repetitive or non-repetitive

IAR

3.6

Non-repetitive

Maximum avalanche energy

Repetitive

Maximum avalanche energy

Maximum drain-source dV/dt

Peak diode recovery dV/dt

Maximum power dissipation

EAS

227.9

Equivalent circuit schematic

EAR

dVDS/dt

6.0

VDS 500V

kV/μs

Drain(D)

dV/dt

Note *4

°C

Tc=25

2.02

+150

Ta=25

Operating and storage

Tch

°C

temperature range

Tstg

-55 to +150 °C

Gate(G)

Note *1 Tch 150°C

Source(S)

Note *2 Starting Tch=25°C, IAS=1.5A, L=186mH, VCC=50V, RG=50Ω

EAS limited by maximum channel temperrature and avalanche current.

See to ‘Avalanche Energy’ graph.

Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.

See to ‘Transient Thermal impedance’ graph.

Note *4 IF -ID, -di/dt=50A/μs, Vcc BVDSS, Tch 150°C

Electrical characteristics (Tc =25°C unless otherwise specified)

Min.

Typ.

Max. Units

Symbol

BVDSS

VGS(th)

Test Conditions

Item

ID= 250 A

VGS=0V

Drain-source breakdown voltage

Gate threshold voltage

500

ID= 250 A

VDS=VGS

3.0

5.0

Tch=25°C

μA

VDS=500V VGS=0V

Zero gate voltage drain current

IDSS

Tch=125°C

250

100

VDS=400V VGS=0V

VGS=±30V VDS=0V

IGSS

RDS(on)

gfs

Gate-source leakage current

Drain-source on-state resistance

Forward transcondutance

Input capacitance

ID=1.8A VGS=10V

1.84

3.4

330

2.5

5.0

2.30

1.7

ID=1.8A VDS=25V

VDS=25V

Ciss

500

Coss

Crss

td(on)

VGS=0V

Output capacitance

f=1MHz

5.0

7.5

Reverse transfer capacitance

Turn-on time ton

VCC=300V ID=1.8A

VGS=10V

td(off)

Turn-off time toff

RGS=10 Ω

VCC=250V

ID=3.6A

Total Gate Charge

5.5

8.5

QGS

QGD

VSD

trr

Gate-Source Charge

Gate-Drain Charge

2.5

1.00

0.5

2.3

3.8

VGS=10V

1.50

IF=3.6A VGS=0V Tch=25°C

IF=3.6A VGS=0V

-di/dt=100A/μs

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

μs

μC

Qrr

Tch=25°C

Thermalcharacteristics

Item

Min.

Typ.

Max. Units

Symbol

Test Conditions

Rth(ch-c)

channel to case

2.083

°C/W

Thermal resistance

Rth(ch-a)

channel to ambient

62.0

°C/W

http://www.fujielectric.co.jp/fdt/scd/

12 3 4

中文翻译

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与2SK3985-01相关器件

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2SK3986-01MR	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3987-01L	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3987-01S	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3987-01SJ	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
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2SK399	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 10A I(D) \| TO-247VAR
2SK3990-01L	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3990-01S	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
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