生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 0.9 A | 最大漏极电流 (ID): | 0.9 A |
最大漏源导通电阻: | 0.83 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 3.5 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3981-01 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET |
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2SK3982-01MR | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET |
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2SK3983-01L | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET |
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2SK3983-01S | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET |
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2SK3983-01SJ | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET |
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2SK3984-ZK | RENESAS |
获取价格 |
18000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA, TO-252, MP-3ZK, 3 PIN |
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2SK3984-ZK-AZ | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,18A I(D),TO-252 |
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2SK3984-ZK-E1-AY | RENESAS |
获取价格 |
Switching N-Channel Power Mosfet, MP-3ZK, /Embossed Tape |
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2SK3985-01 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET |
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2SK3986-01MR | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET |
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