5秒后页面跳转
捷配首页

Datasheet > 2SK3948T
2SK3948T PDF预览

2SK3948T

更新时间： 2024-10-02 21:10:47
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
4页 407K
描述
Small Signal Field-Effect Transistor, 0.00033A I(D), 20V, 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, TSSSMINI3-F1, 3 PIN

阅读下载

中文翻译

获取价格

2SK3948T 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PDSO-F3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.84
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (ID)：0.00033 AFET 技术：JUNCTION
JESD-30 代码：R-PDSO-F3元件数量：1
端子数量：3工作模式：DEPLETION MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

2SK3948T 数据手册

 浏览型号2SK3948T的Datasheet PDF文件第2页浏览型号2SK3948T的Datasheet PDF文件第3页浏览型号2SK3948T的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Silicon Junction FETs (Small Signal)  
2SK3948  
Silicon N-channel junction FET  
For impedance conversion in low frequency  
For electret capacitor microphone  
Package  
Features  
ꢀCode  
Low noise voltage NV  
High voltage gain GV  
Thin package: TSSSMini3-F1 (1.2 mm × 1.2 mm × 0.33 mm)  
TSSSMini3-F1  
ꢀPin Nae  
1:
Absolute Maximum Ratings Ta = 25°C  
2: S
Gate  
Parameter  
Drain-source voltage (Gate open)  
Drain-gate voltage (Souece open)  
Drain-source current (Gate open)  
Drain-gate current (Souece open)  
Power dissipation  
Symbol  
VDSO  
VDGO  
IDO  
Rating  
Uni
V
20  
Marking Symbol: 4X  
2
V
2
mA  
mA  
mW  
°C  
IDG
PD  
100  
Operating ambient temperature  
Storage temperature  
To
–20 to +0  
–55 to 125  
T
stg  
°C  
Electrical Characteritics Ta = 25°C±
Parameter  
S
ID  
Conditions  
Min  
170  
180  
660  
Typ  
Max  
470  
450  
Unit  
mA  
mA  
mS  
1
Draiurren*  
VDD = 2.0 V, Rd = 2.2 kW ± 1%  
VDD = 2.0 V, Rd = 2.2 kW ± 1%, VGS = 0  
VDS = 20 V, VGS = 0, f = 1 kHz  
Drain-oure cur
ISS  
gm  
Mutual conducance  
1500  
VDD = 2.0 V, Rd = 2.2 kW ± 1%  
CO = 5 pF, A-curve  
3
Nise voltage *  
NV  
GV1  
GV2  
GV3  
8
mV  
VDD = 2.0 V, Rd = 2.2 kW ± 1%  
CO = 5 pF, eG = 10 mV, f = 1 kHz  
–5.0  
–3.0  
–7.0  
–1.0  
3.0  
VDD = 12 V, Rd = 2.2 kW ± 1%  
CO = 5 pF, eG = 10 mV, f = 1 kHz  
Voltage gain  
dB  
dB  
VDD = 1.5 V, Rd = 2.2 kW ± 1%  
CO = 5 pF, eG = 10 mV, f = 1 kHz  
–1.5  
VDD = 2.0 V, Rd = 2.2 kW ± 1%  
CO = 5 pF, eG = 10 mV  
f = 1 kHz to 70 Hz  
4
DGV . f*  
0.0  
0.5  
1.7  
1.0  
Voltage gain difference  
GV1 – GV3  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. A protection diode is built-in between gate and source of transistor. However if forward current flows between gate and source transistor  
might be damaged. So please be careful not insert reverse.  
3. *1: ID is assured for IDSS  
.
2: Rank classification  
*
Rank  
T
U
ID (mA)  
170 to 330  
180 to 320  
270 to 470  
280 to 450  
IDSS (mA)  
3: NV is assured for design.  
*
*
4: D|GV . f | is assured for AQL 0.065. (The measurement method is used by source-grounded circuit.)  
Publication date: August 2008  
SJF00097CED  
1
1234

中文翻译

下载PDF

与2SK3948T相关器件

型号 品牌 获取价格 描述 数据表
2SK3973 PANASONIC

获取价格

 		Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
2SK3974-01L FUJI

获取价格

 		Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-
2SK3974-01S FUJI

获取价格

 		Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-
2SK3977 SANYO

获取价格

 		N-Channel Silicon MOSFET General-Purpose Switching Device
2SK3978 SANYO

获取价格

 		N-Channel Silicon MOSFET General-Purpose Switching Device
2SK3979 SANYO

获取价格

 		N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK3979(TP) ONSEMI

获取价格

 		TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,6A I(D),TO-251
2SK3979(TP-FA) ONSEMI

获取价格

 		TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,6A I(D),TO-252
2SK3979TP ONSEMI

获取价格

 		Small Signal Field-Effect Transistor, 6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-
2SK3979TP-FA ONSEMI

获取价格

 		Small Signal Field-Effect Transistor, 6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-

与2SK3948T相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证