Datasheet > 2SK3947_09

2SK3947_09

更新时间： 2024-10-02 07:32:39

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	160K
描述
Switching Regulator Applications

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK3947_09 数据手册

2SK3947

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)

2SK3947

Switching Regulator Applications

Unit: mm

•

Low drain-source ON-resistance: R

= 1.1 Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 5.0S (typ.)

Low leakage current: I

= 100 μA (V

= 600 V)

DSS

Enhancement mode: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-source voltage

Symbol

Rating

Unit

600

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

1: Gate

2: Drain

(Note 1)

Drain current

3: Source

Pulse (t = 1 ms)

(Note 1)

JEDEC

JEITA

―

Drain power dissipation (Tc = 25°C)

Single-pulse avalanche energy

SC-67

2-10U1B

Weight: 1.7 g (typ.)

345

(Note 2)

TOSHIBA

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

3.125

62.5

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 16.8 mH, I = 6 A, R = 25 Ω

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2009-09-29

12 3 4 5 6

中文翻译

下载PDF

与2SK3947_09相关器件

型号	品牌	获取价格	描述	数据表
2SK3948	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00047A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3948G	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00047A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3948GT	PANASONIC	获取价格	SMALL SIGNAL, FET, ROHS COMPLIANT, TSSSMINI3-F2, 3 PIN
2SK3948G-T	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00033A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3948GU	PANASONIC	获取价格	0.47mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, JFET, ROHS COMPLIANT, TSSSMINI3-F2, 3 PIN
2SK3948G-U	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00047A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3948T	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00033A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3973	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
2SK3974-01L	FUJI	获取价格	Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-
2SK3974-01S	FUJI	获取价格	Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-

与2SK3947_09相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

38
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

32
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

29
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

40

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK3947_09

2SK3947_09 数据手册

与2SK3947_09相关器件

与2SK3947_09相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK3947_09

2SK3947_09 数据手册

与2SK3947_09相关器件

与2SK3947_09相关文章

您还可以找

您在本页遇到什么问题？