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2SK3943-ZP PDF预览

2SK3943-ZP

更新时间: 2024-10-01 22:15:03
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 147K
描述
SWITCHING N-CHANNEL POWER MOSFET

2SK3943-ZP 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:TO-263, MP-25ZP, 3 PINReach Compliance Code:compliant
风险等级:5.82Is Samacsys:N
雪崩能效等级(Eas):185 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (ID):82 A最大漏源导通电阻:0.0056 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):328 A认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK3943-ZP 数据手册

 浏览型号2SK3943-ZP的Datasheet PDF文件第2页浏览型号2SK3943-ZP的Datasheet PDF文件第3页浏览型号2SK3943-ZP的Datasheet PDF文件第4页浏览型号2SK3943-ZP的Datasheet PDF文件第5页浏览型号2SK3943-ZP的Datasheet PDF文件第6页浏览型号2SK3943-ZP的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3943  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
ORDERING INFORMATION  
The 2SK3943 is N-channel MOS Field Effect Transistor  
PART NUMBER  
2SK3943-ZP  
PACKAGE  
designed for high current switching applications.  
TO-263 (MP-25ZP)  
FEATURES  
Super low on-state resistance  
RDS(on)1 = 3.5 mMAX. (VGS = 10 V, ID = 41 A)  
Low Ciss: Ciss = 5800 pF TYP.  
(TO-263)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
40  
±20  
V
V
±82  
A
±328  
104  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
W
W
°C  
°C  
mJ  
A
PT2  
1.5  
Tch  
150  
55 to +150  
185  
Storage Temperature  
Tstg  
Single Avalanche Energy Note2  
Repetitive Avalanche Current Note3  
Repetitive Avalanche Energy Note3  
EAS  
IAR  
43  
EAR  
185  
mJ  
Notes 1. PW 10 µs, Duty Cycle 1%  
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 , VGS = 20 0 V, L = 100 µH  
3. Tch(peak) 150°C, RG = 25 Ω  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D17188EJ1V0DS00 (1st edition)  
Date Published February 2005 NS CP(K)  
Printed in Japan  
2005  

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