Datasheet > 2SK3936_09

2SK3936_09

更新时间： 2022-09-18 12:33:38

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	186K
描述
Switching Regulator Applications

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2SK3936_09 数据手册

2SK3936

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II π-MOS VI)

2SK3936

Switching Regulator Applications

Unit: mm

•

Small gate charge: Qg = 60 nC (typ.)

Fast reverse recovery time: t = 380 ns (typ.)

Low drain-source ON-resistance: R

= 0.2 Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 16.5 S (typ.)

Low leakage current: I

= 500 μA (V

= 500 V)

DSS

Enhancement mode: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

1. GATE

2. DRAIN (HEATSINK)

3. SOURCE

GSS

(Note 1)

Drain current

Pulse (Note 1)

JEDEC

―

Drain power dissipation (Tc = 25°C)

150

JEITA

SC-65

Single-pulse avalanche energy

759

(Note 2)

TOSHIBA

2-16C1B

Avalanche current

Weight: 4.6 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

stg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.833

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 2.44 mH, I = 23 A, R = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2009-09-29

12 3 4 5 6

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