Datasheet > 2SK3653J6-A

2SK3653J6-A

更新时间： 2024-11-17 05:14:11

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	44K
描述
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, 0814, SOF-3

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2SK3653J6-A 数据手册

DATA SHEET

JUNCTION FIELD EFFECT TRANSISTOR

2SK3653

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR

FOR IMPEDANCE CONVERTER OF ECM

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The 2SK3653 is suitable for converter of ECM.

0.3 ±0.05

0.13 ⁺^–0⁰^.^.⁰¹⁵

FEATURES

• Compact package

0~0.05

• High forward transfer admittance

1000 µS TYP. (I^DSS= 100 µA)

1600 µS TYP. (I^DSS= 200 µA)

• Includes diode and high resistance at G - S

0.9

1.4 ±0.1

ORDERING INFORMATION

MAX. 0.4

PART NUMBER

2SK3653

PACKAGE

3pinXSOF (0814)

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

+0.1

–0

0.2

Drain to Source Voltage ^Note1

V^DSX

–20

Gate to Drain Voltage

Drain Current

V^GDO

I^D

EQUIVALENT CIRCUIT

°C

Gate Current

I^G

Total Power Dissipation ^Note2

Junction Temperature

Storage Temperature

Drain

P^T

T^j

125

Gate

T^stg

–55 to +125 °C

Source

Notes 1. V^GS= –1.0 V

2. Mounted on ceramic substrate of 3.0 cm²x 0.64 mm

Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published June 2002 NS CP(K)

Printed in Japan

D16293EJ1V0DS00 (1st edition)

2002

12 3 4 5 6

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