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2SK365-Y

更新时间: 2024-09-28 13:02:39
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体转换器开关音频放大器小信号场效应晶体管
页数 文件大小 规格书
5页 679K
描述
TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Signal

2SK365-Y 技术参数

生命周期:Transferred包装说明:2-4E1C, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.3配置:SINGLE
FET 技术:JUNCTIONJESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK365-Y 数据手册

 浏览型号2SK365-Y的Datasheet PDF文件第2页浏览型号2SK365-Y的Datasheet PDF文件第3页浏览型号2SK365-Y的Datasheet PDF文件第4页浏览型号2SK365-Y的Datasheet PDF文件第5页 
2SK365  
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type  
2SK365  
For Audio Amplifier, Analog-Switch, Constant Current  
and Impedance Converter Applications  
Unit: mm  
High breakdown voltage: V  
= 50 V  
GDS  
High input impedance: I  
= 1.0 nA (max) (V  
= 30 V)  
GSS  
GS  
Low R  
: R  
= 80 (typ.) (I  
= 5 mA)  
DS (ON) DS (ON)  
DSS  
Small package  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Gate-drain voltage  
Symbol  
Rating  
Unit  
V
50  
10  
V
GDS  
Gate current  
I
mA  
mW  
°C  
G
Drain power dissipation  
Junction temperature  
Storage temperature range  
P
200  
D
T
j
125  
T
stg  
55~125  
°C  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TOSHIBA  
2-4E1C  
Weight: 0.13 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate cut-off current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
= −30 V, V  
= 0  
1.0  
nA  
V
GSS  
GS  
DS  
DS  
Gate-drain breakdown voltage  
V
= 0, I = −100 μA  
50  
(BR) GDS  
G
I
DSS  
Drain current  
V
= 10 V, V  
= 0  
1.2  
14  
mA  
DS  
GS  
(Note 1)  
Gate-source cut-off voltage  
Forward transfer admittance  
Input capacitance  
V
V
V
V
V
V
= 10 V, I = 0.1 μA  
0.25  
5.0  
19  
13  
3
1.5  
V
mS  
pF  
pF  
Ω
GS (OFF)  
Y ⎪  
DS  
DS  
DS  
DG  
DS  
D
= 10 V, V  
= 10 V, V  
= 0, f = 1 kHz (Note 2)  
= 0, f = 1 MHz  
fs  
GS  
GS  
C
iss  
rss  
Reverse transfer capacitance  
Drain-source ON resistance  
C
= 10 V, I = 0, f = 1 MHz  
D
R
= 10 mV, V  
= 0  
GS  
(Note 2)  
80  
DS (ON)  
Note 1:  
I
classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA  
DSS  
Note 2: Condition of the typical value I  
= 5 mA  
DSS  
1
2007-11-01  

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