Datasheet > 2SK3658(TE12L,F)

2SK3658(TE12L,F)

更新时间： 2024-09-28 21:18:39

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	404K
描述
Trans MOSFET N-CH 60V 2A 4-Pin(3+Tab) PW-Mini T/R

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中文翻译

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技术参数
数据手册

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2SK3658(TE12L,F) 技术参数

生命周期：	End Of Life	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.69
Base Number Matches：	1

2SK3658(TE12L,F) 数据手册

2SK3658

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)

2SK3658

DC−DC Converter, Relay Drive and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0.23 Ω (typ.)

DS (ON)

: |Y | = 2.0 S (typ.)

z Low leakage current

z Enhancement−mode

: I

= 100 μA (max) (V

= 60 V)

DSS

: V = 0.8 to 2.0 V (V

= 10 V, I = 1mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

±20

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

0.5

Drain power dissipation (Tc = 25°C)

Drain power dissipation

Channel temperature

(Note 2)

1.5

JEDEC

JEITA

⎯

150

°C

Storage temperature range

−55 to 150

SC-62

2-5K1B

stg

TOSHIBA

Note 1: Please use devices on condition that the channel temperature is

below 150°C.

Weight: 0.05 g (typ.)

Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change

in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

250

Unit

Thermal resistance, channel to ambient

°C / W

th (ch−a)

This transistor is an electrostatic sensitive device.

Please handle with caution.

Marking

Lot no.

Week of manufacture

Year of manufacture: last decimal digit of the year of manufacture

Product no. (abbr.)

2006-11-17

12 3 4 5 6

中文翻译

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与2SK3658(TE12L,F)相关器件

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2SK3659	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK365BL	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 6MA I(DSS) \| SPAK
2SK365-BL	TOSHIBA	获取价格	TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Sig
2SK365GR	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 2.6MA I(DSS) \| SPAK
2SK365-GR	TOSHIBA	获取价格	TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Sig
2SK365Y	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 1.2MA I(DSS) \| SPAK
2SK365-Y	TOSHIBA	获取价格	TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Sig
2SK366	TOSHIBA	获取价格	N CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANC
2SK366_07	TOSHIBA	获取价格	Silicon N Channel Junction Type For Audio Amplifier, Analog-Switch, Constant Current and I
2SK3662	TOSHIBA	获取价格	Switching Regulator, DC−DC Converter, Motor Drive Applications

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