2SK3656

更新时间： 2024-09-28 04:26:31

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体放大器小信号场效应晶体管射频小信号场效应晶体管
页数	文件大小	规格书
5页	157K
描述
Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications

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中文翻译

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技术参数
数据手册

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2SK3656 技术参数

生命周期：	Obsolete	零件包装代码：	SC-62
包装说明：	LEAD FREE, 2-5K1D, SC-62, 3 PIN	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.82	外壳连接：	SOURCE
配置：	SINGLE	最小漏源击穿电压：	7.5 V
最大漏极电流 (ID)：	0.5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-PSSO-F3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	FLAT
端子位置：	SINGLE	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

2SK3656 数据手册

2SK3656

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK3656

VHF- and UHF-band Amplifier Applications

Unit: mm

(Note)The TOSHIBA products listed in this document are intended for high

frequency Power Amplifier of telecommunications equipment.These

TOSHIBA products are neither intended nor warranted for any other

use.Do not use these TOSHIBA products listed in this document except for

high frequency Power Amplifier of telecommunications equipment.

•

Output power: P =28.4dBmW (typ)

Gain: G = 15.4dB (typ)

Drain efficiency: η = 64% (typ)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

7.5

3.5

DSS

Gain-source voltage

Drain current

(Note 1)

GSS

0.5

Power dissipation

(Note 2)

°C

Channel temperature

Storage temperature range

150

⎯

JEDEC

JEITA

stg

−45~150

SC-62

2-5K1D

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

Weight: 0.05 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Operating Ranges: 0~3.5V

Note 2: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)

Marking

Part No. (or abbreviation code)

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Lot No.

1. Gate

2. Source

3. Drain

Caution: This device is sensitive to electrostatic discharge.

Please make enough tool and equipment earthed when you handle.

2007-11-01

12 3 4 5

中文翻译

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