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2SK3479-S-AZ

更新时间: 2024-11-12 13:04:27
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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3479  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
ORDERING INFORMATION  
PART NUMBER  
2SK3479  
The 2SK3479 is N-channel MOS Field Effect Transistor  
designed for high current switching applications.  
PACKAGE  
TO-220AB  
TO-262  
2SK3479-S  
FEATURES  
2SK3479-ZJ  
TO-263  
Super low on-state resistance:  
RDS(on)1 = 11 mMAX. (VGS = 10 V, ID = 42 A)  
RDS(on)2 = 13 mMAX. (VGS = 4.5 V, ID = 42 A)  
Low Ciss: Ciss = 11000 pF TYP.  
Built-in gate protection diode  
2SK3479-Z  
TO-220SMDNote  
Note TO-220SMD package is produced only  
in Japan.  
(TO-220AB)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
100  
±20  
V
V
A
A
±83  
±332  
125  
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
W
W
(TO-262)  
PT2  
1.5  
Tch  
150  
°C  
°C  
A
Storage Temperature  
Tstg  
–55 to +150  
65  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
422  
mJ  
Notes 1. PW 10 µs, Duty cycle 1%  
(TO-263, TO-220SMD)  
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published July 2001 NS CP(K)  
Printed in Japan  
D15077EJ1V0DS00 (1st edition)  
2000, 2001  
©

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