是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.75 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 83 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 125 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3479-ZJ | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOSFET | |
2SK3479-ZJ-AZ | NEC |
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Power Field-Effect Transistor, 83A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Me | |
2SK3480 | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOSFET | |
2SK3480 | KEXIN |
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MOS Field Effect Transistor | |
2SK3480 | TYSEMI |
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Super low on-state resistance: RDS(on)1 = 31 m MAX. Built-in gate protection diode | |
2SK3480(0)-Z-E1-AZ | RENESAS |
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Nch Single Power MOSFET 100V 50A 31mohm MP-25Z/TO-220SMD | |
2SK3480(0)-Z-E2-AZ | RENESAS |
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Nch Single Power MOSFET 100V 50A 31mohm MP-25Z/TO-220SMD | |
2SK3480-AZ | NEC |
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Power Field-Effect Transistor, 50A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me | |
2SK3480-AZ | RENESAS |
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Power Field-Effect Transistor, 50A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me | |
2SK3480-S | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOSFET |