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2SK3424-AZ PDF预览

2SK3424-AZ

更新时间: 2024-11-20 19:34:19
品牌 Logo 应用领域
日电电子 - NEC 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 67K
描述
Power Field-Effect Transistor, 48A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN

2SK3424-AZ 技术参数

生命周期:Transferred零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.21
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):48 A
最大漏源导通电阻:0.017 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):192 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK3424-AZ 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3424  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
ORDERING INFORMATION  
DESCRIPTION  
The 2SK3424 is N-Channel MOS FET device that features a  
low on-state resistance and excellent switching characteristics,  
designed for low voltage high current applications such as  
DC/DC converter with synchronous rectifier.  
PART NUMBER  
2SK3424  
PACKAGE  
TO-220AB  
2SK3424-ZK  
2SK3424-ZJ  
TO-263(MP-25ZK)  
TO-263(MP-25ZJ)  
FEATURES  
4.5 V drive available  
Low on-state resistance  
RDS(on)1 = 11.5 mMAX. (VGS = 10 V, ID = 24 A)  
Low gate charge  
QG = 34 nC TYP. (ID = 48 A, VDD = 24 V, VGS = 10 V)  
Built-in gate protection diode  
Surface mount device available  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
VDSS  
VGSS  
30  
V
V
±20  
Drain Current (DC) (TC = 25°C)  
Drain Current (Pulse) Note  
ID(DC)  
ID(pulse)  
PT1  
±48  
±192  
A
A
Total Power Dissipation (TA = 25°C)  
Total Power Dissipation (TC = 25°C)  
1.5  
W
W
°C  
°C  
PT2  
50  
Channel Temperature  
Storage Temperature  
Tch  
150  
Tstg  
55 to +150  
Note PW 10 µs, Duty Cycle 1%  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published May 2001 NS CP(K)  
Printed in Japan  
D14640EJ2V0DS00 (2nd edition)  
1999, 2000  
©
The mark shows major revised points.  

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