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2SK3424 PDF预览

2SK3424

更新时间: 2024-11-24 22:52:59
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日电电子 - NEC 开关
页数 文件大小 规格书
8页 69K
描述
SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

2SK3424 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3424  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
ORDERING INFORMATION  
DESCRIPTION  
The 2SK3424 is N-Channel MOS FET device that features a  
low on-state resistance and excellent switching characteristics,  
designed for low voltage high current applications such as  
DC/DC converter with synchronous rectifier.  
PART NUMBER  
2SK3424  
PACKAGE  
TO-220AB  
2SK3424-ZK  
2SK3424-ZJ  
TO-263(MP-25ZK)  
TO-263(MP-25ZJ)  
FEATURES  
4.5 V drive available  
Low on-state resistance  
RDS(on)1 = 11.5 mMAX. (VGS = 10 V, ID = 24 A)  
Low gate charge  
QG = 34 nC TYP. (ID = 48 A, VDD = 24 V, VGS = 10 V)  
Built-in gate protection diode  
Surface mount device available  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
VDSS  
VGSS  
30  
V
V
±20  
Drain Current (DC) (TC = 25°C)  
Drain Current (Pulse) Note  
ID(DC)  
ID(pulse)  
PT1  
±48  
±192  
A
A
Total Power Dissipation (TA = 25°C)  
Total Power Dissipation (TC = 25°C)  
1.5  
W
W
°C  
°C  
PT2  
50  
Channel Temperature  
Storage Temperature  
Tch  
150  
Tstg  
55 to +150  
Note PW 10 µs, Duty Cycle 1%  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published May 2001 NS CP(K)  
Printed in Japan  
D14640EJ2V0DS00 (2nd edition)  
1999, 2000  
©
The mark shows major revised points.  

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