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2SK3388_09

更新时间： 2024-11-21 06:16:11
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器稳压器开关电机驱动
页数 文件大小 规格书
6页 194K
描述
Switching Regulator and DC-DC Converter Applications Motor Drive Applications

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中文翻译

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2SK3388_09 数据手册

 浏览型号2SK3388_09的Datasheet PDF文件第2页浏览型号2SK3388_09的Datasheet PDF文件第3页浏览型号2SK3388_09的Datasheet PDF文件第4页浏览型号2SK3388_09的Datasheet PDF文件第5页浏览型号2SK3388_09的Datasheet PDF文件第6页 
2SK3388  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)  
2SK3388  
Switching Regulator and DC-DC Converter Applications  
Unit: mm  
Motor Drive Applications  
•
•
•
•
Low drain-source ON resistance: R  
= 82 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 20 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (V  
= 250 V)  
DSS  
DS  
Enhancement mode: V = 1.5 to 3.5 V (V  
= 10 V, I = 1 mA)  
th  
DS  
D
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
250  
250  
±20  
20  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
D
Drain current  
A
I
60  
DP  
Drain power dissipation (Tc = 25°C)  
P
125  
W
D
AS  
AR  
JEDEC  
JEITA  
―
Single pulse avalanche energy  
E
487  
mJ  
(Note 2)  
SC-97  
2-9F1B  
Avalanche current  
I
20  
12.5  
A
TOSHIBA  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 0.74 g (typ.)  
T
150  
ch  
Storage temperature range  
T
−55~150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Circuit Configuration  
Characteristics  
Symbol  
Max  
1.00  
Unit  
Notice:  
Please use the S1 pin for gate  
input signal return. Make  
sure that the main current  
flows into the S2 pin.  
Thermal resistance, channel to case  
R
°C/W  
th (ch-c)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: V = 50 V, T = 25°C (initial), L = 2.06 mH, I = 20 A, R = 25 Ω  
DD  
ch  
AR  
G
Note 3: Repetitive rating: pulse width limited by maximum channel  
temperature  
4
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2
3
1
2009-09-29  
123456

中文翻译

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