Datasheet > 2SK3389_06

2SK3389_06

更新时间： 2024-11-21 04:26:31

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器开关电机驱动
页数	文件大小	规格书
7页	188K
描述
Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Motor Drive Applications

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2SK3389_06 数据手册

2SK3389

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

2SK3389

Switching Regulator and DC-DC Converter Applications

Unit: mm

Motor Drive Applications

•

Low drain-source ON resistance: R

= 3.8 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 70 S (typ.)

Low leakage current: I

= 100 μA (V

= 30 V)

DSS

Enhancement mode: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

±30

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

300

125

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

―

Single pulse avalanche energy

731

(Note 2)

SC-97

2-9F1B

Avalanche current

12.5

TOSHIBA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 0.74 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Notice:

Characteristics

Symbol

Max

1.00

Unit

Please use the S1 pin for gate input

signal return. Make sure that the

main current flows into the S2 pin.

Thermal resistance, channel to case

°C/W

th (ch-c)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V = 25 V, T = 25°C (initial), L = 95 μH, I = 75 A, R = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

2006-11-16

12 3 4 5 6 7

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