Datasheet > 2SK3397_09

2SK3397_09

更新时间： 2024-11-21 07:32:31

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器转换器继电器
页数	文件大小	规格书
6页	204K
描述
Relay Drive and DC-DC Converter Applications

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数据手册

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2SK3397_09 数据手册

2SK3397

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

2SK3397

Relay Drive and DC-DC Converter Applications

Unit: mm

Motor Drive Applications

Low drain-source ON resistance: R

= 4.0 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 110 S (typ.)

Low leakage current: I

= 10 μA (max) (V

= 30 V)

DSS

Enhancement mode: V = 1.5 to 3.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

±20

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

210

125

JEDEC

JEITA

―

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

273

TOSHIBA

2-9F1C

(Note 2)

Weight: 0.74 g (typ.)

Avalanche current

12.5

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

stg

−55 to150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Circuit Configuration

Characteristics

Symbol

Max

1.0

Unit

Thermal resistance, channel to case

°C/W

th (ch-c)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 25 V, T = 25°C (initial), L = 40 μH, I = 70 A, R = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2009-09-29

12 3 4 5 6

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