Datasheet > 2SK3403_06

2SK3403_06

更新时间： 2024-11-25 04:26:31

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	293K
描述
Silicon N Channel MOS Type Switching Regulator Applications

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中文翻译

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数据手册

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2SK3403_06 数据手册

2SK3403

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

2SK3403

Switching Regulator Applications

Unit: mm

•

Low drain-source ON resistance: R

High forward transfer admittance: |Y | = 5.8 S (typ.)

= 0.29 Ω (typ.)

DS (ON)

Low leakage current: I

= 100 μA (max) (V

= 450 V)

DSS

Enhancement mode: V = 3.0~5.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

450

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

100

JEDEC

JEITA

―

Single pulse avalanche energy

350

(Note 2)

Avalanche current

TOSHIBA

2-10S1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 1.5 g (typ.)

150

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

1.25

83.3

°C/W

th (ch-c)

JEDEC

JEITA

―

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

TOSHIBA

2-10S2B

Note 2:

V = 90 V, T = 25°C (initial), L = 3.46 mH, R = 25 Ω,

DD ch G

= 13 A

Weight: 1.5 g (typ.)

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

2006-11-06

12 3 4 5 6

中文翻译

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